AIMS EUV: the actinic aerial image review platform for EUV masks

Hellweg, Dirk; Ruoff, Johannes; Herkommer, Alois; Stühler, Joachim; Ihl, Thomas; Feldmann, Heiko; Ringel, Michael; Strößner, Ulrich; Perlitz, Sascha; Harnisch, Wolfgang

doi:10.1117/12.879422

Cited by 17 publications

(8 citation statements)

References 3 publications

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“…3,4 Prototypes and research tools have been at the forefront of actinic mask research for over a decade, 5 and they may continue to chart the course, reaching forward to explore future nodes and ever-higher resolutions.…”

Section: Introductionmentioning

confidence: 99%

An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm

Goldberg¹,

Mochi

Rekawa

et al. 2011

SPIE Proceedings

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We present the potential optical performance capabilities of a next-generation extreme ultraviolet (EUV) mask-imaging microscope, based on the proven optical principle of the SEMATECH Berkeley Actinic Inspection Tool (AIT), but surpassing it in every performance metric. The new synchrotron-based tool, referred to here as the SEMATECH Berkeley Actinic Imaging Tool at 0.5 NA (AIT5) will enable research on multiple generations of EUV lithography design rules. The proposed microscope features an array of user-selectable Fresnel zoneplate lenses with diffractionlimited quality and different optical properties, such as numerical aperture (NA) and magnification. An efficient all-EUV optical system with variable high magnification and direct EUV detection provides images with the highest possible signal-to-noise ratio. A lossless, customizable-coherence illuminator based on angle-scanning mirrors and an ellipsoidal condenser creates arbitrary pupil fill patterns, with partial coherence σ values up to 1.0 at 0.5 4×NA and higher. In combination with rotated zoneplate objective lenses, the illuminator will be capable of a range of discrete azimuthal angles as well, modeling the behavior of EUV steppers across a ring-field of view.

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Section: Introductionmentioning

confidence: 99%

An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm

Goldberg¹,

Mochi

Rekawa

et al. 2011

SPIE Proceedings

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“…Because the etendue requirement [6] for these inspection systems is quite small, the EUV light can be extracted at a very small NA. The physics of the scheme rely on the following qualitative observations.…”

Section: The Laser-heated Pinchmentioning

confidence: 99%

High brightness electrodeless Z-Pinch EUV source for mask inspection tools

et al. 2012

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Energetiq Technology has been shipping the EQ-10 Electrodeless Z-pinchTM light source since 1995[1]. The source is currently being used for metrology, mask inspection, and resist development [2,3,4]. Energetiq's higher brightness source has been selected as the source for pre-production actinic mask inspection tools. This improved source enables the mask inspection tool suppliers to build prototype tools with capabilities of defect detection and review down to 16nm design rules.In this presentation we will present new source technology being developed at Energetiq to address the critical source brightness issue. The new technology will be shown to be capable of delivering brightness levels sufficient to meet the HVM requirements of AIMS and ABI and potentially API tools. The basis of the source technology is to use the stable pinch of the electrodeless light source and have a brightness of up to 100W/mm^2-sr. We will explain the source design concepts, discuss the expected performance and present the modeling results for the new design.

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“…Due to the difference in profile, the Lorentzian distribution will have a peak brightness significantly less than that of the Gaussian. 5 To estimate the average radiance from within the FWHM, one could subtract from the total power the fraction of the power that is emanating from outside the FWHM, and use the average power emanating from within for the calculation.…”

Section: Brightnessmentioning

confidence: 99%

“…[2][3][4] A range of requirements have been identified by the major tool inspection and metrology manufacturers outlining brightness needs to ensure a high throughput, high sensitivity tool required by the fabs. 5 By enhancing the performance of Energetiq's standard EQ-10 source, the brightness required for the first generation of these tools has been substantially achieved. Further enhancements will be needed for subsequent generations.…”

Section: Introductionmentioning

confidence: 99%

Extreme-ultraviolet light source development to enable pre-production mask inspection

Partlow

Besen

Blackborow

et al. 2012

J. Micro/Nanolith. MEMS MOEMS

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As extreme-ultraviolet (EUV) lithography moves into preproduction, the requirement for commercially available mask metrology tools becomes more urgent. A key to developing a successful tool is a reliable, high-brightness EUV light source. The Energetiq EQ-10 is a commercially available EUV light source, with an installed base of over 15 sources in the field. The source relies on an electrodeless Z-pinch™ to produce greater than 10 Watts∕2π of 13.5 nm 2% bandwidth light. In order to meet brightness and stability requirements of mask metrology tools, we have investigated modifications to the original design of the EQ-10. The result of these modifications has roughly doubled the source output power, and has achieved brightness greater than 8 Watts∕mm 2 ∕sr, without sacrificing the spatial and pulse-to-pulse stability of the original design. This level of performance is sufficient for initial mask blank and imaging inspection tools.

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AIMS EUV: the actinic aerial image review platform for EUV masks

Cited by 17 publications

References 3 publications

An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm

An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm

High brightness electrodeless Z-Pinch EUV source for mask inspection tools

Extreme-ultraviolet light source development to enable pre-production mask inspection

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