Ag Ionic Memory Cell Technology for Terabit-Scale High-DensityApplication

Fujii, Shosuke; Ichihara, Reika; Konno, Tomohiro; Yamaguchi, Mari; Seki, Harumi; Tanaka, Hiroki; Zhao, Dongfeng; Yoshimura, Y.; Saitoh, Masumi; Koyama, Masato

doi:10.23919/vlsic.2019.8778071

Cited by 2 publications

(9 citation statements)

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“…Apart from V O -CF or metal-CF, the performance of the RRAM device can be altered with the formation of (metal + V O )-CF-a hybrid filament (HF). [76,[81][82][83][84][85][86] Molas et al reported that the presence of V O can facilitate the migration of Cu cations in the Cu/ HfO x system. [82] To understand the favorable nature of the filament, atomistic simulations were performed on Cu/HfO 2 , Cu/ Ta 2 O 5 , Cu/Al 2 O 3, and Cu/GdO x systems.…”

Section: Design Of the Hybrid Filament In Hafnium Oxidementioning

confidence: 99%

“…Previously, Fujii et al proposed that the proper density and stoichiometry of the oxide layer can improve the MS performance in Ag/SiO x structure. [85] To further improve the performance of the Ag/HfO x structure, VIP at moderately high current (I VIP ) has been proposed in our earlier work. [81] Figure 11a depicts the variation of HRS after MS as a function of LRS after pre-forming with different I VIP values.…”

Section: Hybrid Filament-based Memorymentioning

confidence: 99%

“…For example, Ag/ HfO x devices can maintain data retention for 10 years only at 70 °C. [76,85] As compared to this, HfO x -VCM or HfAlO can (a) Reproduced with permission. [75] Copyright 2021, Elsevier.…”

Section: Multi-level Cell Storagementioning

confidence: 99%

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Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Banerjee

Kashir

Kamba

2022

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113

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Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO2 in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO2 equip the former to achieve superlative performance with high‐speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO2 domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO2 materials in emerging applications, such as high‐density memory and neuromorphic devices are examined, and the various challenges of HfO2‐based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.

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Section: Design Of the Hybrid Filament In Hafnium Oxidementioning

confidence: 99%

Section: Hybrid Filament-based Memorymentioning

confidence: 99%

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Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Banerjee

Kashir

Kamba

2022

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113

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“…For single-oxide layers or multiple layers without any device decoration, even the same element composition can lead to different switching behaviors. Zhang et al [10a] proposed a Ag/SiO 2 /Au RDTSM with TS behavior at ≈100 µA, while Fujii et al [54] reported a [40] Copyright 2019, Wiley-VCH. The reason lies in that Ag clusters can be formed in low-density SiO 2 with many pores but cannot in high-density SiO 2 .…”

Section: Modulation Of Operation Currentsmentioning

confidence: 99%

“…[ 10a ] proposed a Ag/SiO 2 /Au RDTSM with TS behavior at ≈100 µA, while Fujii et al. [ 54 ] reported a Ag/SiO 2 ‐based RRAM with nonvolatile RS behavior at ≈100 nA. The reason lies in that Ag clusters can be formed in low‐density SiO 2 with many pores but cannot in high‐density SiO 2 .…”

Section: Dielectricsmentioning

confidence: 99%

Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

Sun

Song

Yin

et al. 2020

Adv Elect Materials

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In most cases, the current flows uniformly through the device in the HRS and is restricted to a local region with high conductance known as a conducting filament (CF) in the LRS. [3] Among them, a specific memory device is termed as conductivebridge RRAM (CBRAM), where the formation/rupture of metallic conductive filaments are dominated by cation migration and redox processes. [4] Meanwhile, volatile resistance switching behaviors are commonly observed in CBRAM as threshold switching (TS). Analogous to the nonvolatile electrochemical metallization mechanism in terms of materials and structures, [5] the electrical resistance of such a threshold switching memristor (TSM) could decrease by orders of magnitude when an electric field is applied due to the formation of CFs with active metal (such as Ag or Cu) atoms. [6] Differently, the resistance returns back spontaneously after the termination of the external bias, yielding a superior I-V nonlinearity and unique temporal conductance evolution dynamics. [7] Recent years, the threshold switching memristors based on active metals are also called "diffusive memristors" to emphasize the diffusion dynamics of the metal species. [8] To be more comprehensively, redox-diffusive threshold switching memristor (RDTSM) might be the best choice to demonstrate the overall switching behavior. [1a] RDTSM has gained significant attention due to its similar advantages to RRAM, such as the simple structure, great fabricability and integrability, and compatibility with conventional CMOS technology. More importantly, it has great potential in many vital applications, such as two-terminal selectors with high nonlinearity, [9] high-powerefficient synaptic or neuronal devices with novel functions. [8,10] A specific application requires a correspondingly proper device. Figure 1 displays the measurement schematic of the key parameters of RDTSM, including selectivity (or nonlinearity), compliance currents, switching voltages (including threshold voltages and hold voltages),TS mode (unidirectional and bidirectional, as shown in Figure 1a,b, respectively), switching slopes (Figure 1c), response time (including delay and relaxation, as shown in Figure 1d) and endurance, which are all up to the material composition and device structure. [11] Therefore, With the rapid development of information technique in the big-data era, there is an extremely urgent demand for new circuit building blocks, represented by resistive switching memristors with high speed, high-density integration, and power-efficiency, to overcome the limitations of electronic device scaling and thus achieve non-von-Neumann neuromorphic computing. Redox-diffusive threshold switching memristors, based on the volatile formation/rupture of metallic conductive filaments, are attracting great attention for many novel applications, ranging from selectors to synaptic and neuronal devices. Here, how to design a proper redox-diffusive threshold switching memristor is comprehensively introduced, with particular focus on the effect of the devic...

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Ag Ionic Memory Cell Technology for Terabit-Scale High-DensityApplication

Cited by 2 publications

References 1 publication

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

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Ag Ionic Memory Cell Technology for Terabit-Scale High-DensityApplication

Cited by 2 publications

References 1 publication

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

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Product

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Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories