The control of nanometer-scale
metallic silver particles morphology
and their functional properties on a large scale represent a key factor
for applications such as plasmonics, sensors, catalysts, or antimicrobial
surfaces. The present work investigates in detail the growth of Ag
nanoparticles deposited by plasma-enhanced atomic layer deposition
(PE-ALD), from triethylphosphine(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate)silver(I)
[Ag(fod)(PEt3)C16H25AgF7O2P] as the Ag precursor and H2 as the
reducing agent. The uniformity of the deposition in terms of nanoparticle
morphology and chemical composition over a large surface area (8 in.)
is analyzed using an original method. For all morphological, crystallographic,
and chemical quantities, we report both the value at the center position
and more originally, the gradient over a 10 cm distance on the substrate.
The evolution of the gradient provides significant information on
the growth mechanism. An effective growth rate of 0.020 ± 0.003
nm/cycle at 130 °C determined by energy-dispersive X-ray spectroscopy
is found uniformly over the whole 8-inch area of the sample. According
to X-ray diffraction and X-ray photoemission spectroscopy performed
on the whole silicon wafer, the deposited material is made of polycrystalline
pure metallic Ag, with a low amount of impurities emanating from the
precursor, showing the completeness of the reduction reaction. Under
self-limiting conditions, the effects of the chamber temperature and
cycle number on the morphology of Ag nanoparticles deposited on silicon
are analyzed. The results suggests that the Ag thin films mainly evolve
following a material transfer. Two potential mechanisms are in competition:
the migration of the particles and their further coalescence through
the Volmer–Weber growth mode or a “surface Ostwald ripening”-like
process. Under certain conditions, this last mechanism could explain
the nonuniformity of the deposition.