Afterglow in bulk AlN single crystals under β-irradiation

Вохминцев, А. С.; Weinstein, I. A.; Spiridonov, D. M.

doi:10.1016/j.jlumin.2012.03.066

Cited by 25 publications

(17 citation statements)

References 22 publications

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“…Though this phenomenon was mentioned already in a number of papers including [42], the detailed study was performed in [40]. The spectral distribution of this emission at 300 is shown in Figure 9.10.…”

Section: Afterglowmentioning

confidence: 73%

AlN Ceramics from Nanosized Plasma Processed Powder, its Properties and Application

2014

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Section: Afterglowmentioning

confidence: 73%

AlN Ceramics from Nanosized Plasma Processed Powder, its Properties and Application

2014

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“…This is supported by the decrease of the lightsum and maximum intensity by 4.3 and 4.6, respectively as well as by the shift of the maximum toward the high-temperature range by 23 K. It is known that during storage of the AlN sample for 15 min in darkness the TL light sum decreases by 1.2 and the peak shifts by 5 K [11]. Similar changes of the TL peaks within the spectral range under study during optical stimulation and storage evidence that the same charge carrier traps take part in recombination OSL and AG processes of the irradiated bulk AlN single crystals.…”

mentioning

confidence: 70%

“…3). Note, that AG is typical for different structures of the irradiated AlN and is present already before switching on the laser [11,17]. After initiation of stimulation ("laser on") the emission intensity increases dramatically and cumulative "OSL + AG" signal is registered (Fig.…”

mentioning

confidence: 93%

“…It is characterised by high temperature conductivity, its thermal expansion coefficient being close to that of silicon, thus ensuring its wide use in optoelectronics and microelectronics as UV emitter and UV detectors, substrate for hybrid integrated chip and power electronics [1][2][3]. Synthesis of first bulk AlN single crystals gave the fillip to a number of studies related to investigation of their emission properties with different spectroscopic methods [4][5][6][7][8][9][10][11]. Possible applications of the AlN single crystals in solid state dosimetry of β-and UV-irradiation with methods of thermally and optically stimulated luminescence (TL and OSL) are shown in Ref.…”

Section: Introductionmentioning

confidence: 99%

“…This mathematical approach is justified in Ref. [11], where AG of the irradiated AlN single crystals is shown to be described by exponential components with decay constants 59 s and 606 s. Thus, 5 min after the end of irradiation (before laser stimulation) basic contribution to AG is made by a slow component.…”

mentioning

confidence: 99%

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Continuous wave OSL in bulk AlN single crystals

Вохминцев

Weinstein

Spiridonov

2012

Phys. Status Solidi C

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The kinetics of recombination luminescence of β‐irradiated AlN single crystals has been studied with continuous wave optically stimulated luminescence (CW‐OSL) method. It is shown that the OSL process is characterized by two exponential components with a decay time τ = 32 and 212 s. Photoionization cross‐sections σ = 4.8·10‐19 and 7.3·10‐20 cm2 have been evaluated, assuming each component is related to electron traps based on VN‐ and/or ON‐centers at various charged states. It is established that dose dependences of the OSL response of the bulk crystals under study are linear with taking into correct accounting for the radiation induced afterglow and hence can be used for quantitative estimates in solid state dosimetry. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Recombination luminescence in aluminum nitride ceramics

Trinkler

Bērziņa

2013

Physica Status Solidi (b)

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Photoluminescence (PL) and afterglow luminescence (AGL) produced by UV laser irradiation with varied intensity were studied in AlN ceramics in the 10–300 K temperature range. Luminescence spectra of AlN ceramics contain the UV–blue band built up of two components – the UV (3.18 eV) and Blue (2.58 eV) bands, which are presumably ascribed to recombination luminescence involving oxygen‐related centers in the bulk and on the surface of AlN, correspondingly. It was found that position of the emission band maximum of AlN ceramics depends on such factors as excitation density, temperature, and delay time after excitation ceasing – in the case of AGL. In PL spectra, the excitation density growth produces the blue shift of the UV emission band peak, and temperature growth from 10 to 300 K causes first the blue and then the red shift. The most characteristic feature of the AGL is the red shift of the resultant UV–blue peak occurring with growth of delay time after excitation ceasing. Explanations of these phenomena are proposed basing on properties of radiative donor–acceptor pair recombination in semiconductors and varied relative contribution of the UV and Blue components to build‐up of the resultant UV–blue band.

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Afterglow in bulk AlN single crystals under β-irradiation

Cited by 25 publications

References 22 publications

AlN Ceramics from Nanosized Plasma Processed Powder, its Properties and Application

AlN Ceramics from Nanosized Plasma Processed Powder, its Properties and Application

Continuous wave OSL in bulk AlN single crystals

Recombination luminescence in aluminum nitride ceramics

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