2005
DOI: 10.1016/j.surfcoat.2004.03.005
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AFM study of LaNiO3 thin films on various single crystal substrates prepared by using a metal naphthenate precursor

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Cited by 16 publications
(5 citation statements)
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“…Among various coating techniques to prepare highly oriented ZnO thin films, the chemical-solution-based process is one of particular interest because of its good control of stoichiometry, ease of implementation, and low-temperature synthesis [1][2][3][4][5]. Metal naphthenates as starting materials are more advantageous than metal alkoxides, in terms of stability in air and ease of handling [6,7].…”
Section: Introductionmentioning
confidence: 99%
“…Among various coating techniques to prepare highly oriented ZnO thin films, the chemical-solution-based process is one of particular interest because of its good control of stoichiometry, ease of implementation, and low-temperature synthesis [1][2][3][4][5]. Metal naphthenates as starting materials are more advantageous than metal alkoxides, in terms of stability in air and ease of handling [6,7].…”
Section: Introductionmentioning
confidence: 99%
“…In accordance with the well-known theories of thin film crystallization and grain growth, it should be expected that highly oriented or epitaxial LNO thin films can be obtained on oxide substrates (Hwang et al, 2005). Since Si is a covalent material, ionic bonds cannot form between Si atoms and any ion from the deposited oxide material (Hegde, 2001).…”
Section: Resultsmentioning
confidence: 65%
“…Therefore, it is very important to develop chemical methods for the preparation of highly oriented multi‐component thin films. In the case of solution‐derived thin films, their characteristics depend on various factors: properties of the precursor solution (Ueno et al , 2005), annealing temperature (Suzuki et al , 2007) and the substrate type (Hwang et al , 2005). Both the deposited material and the substrate must have good chemical compatibility and/or good matching between their thermal expansion coefficients and lattice parameters, good thermal stability etc.…”
Section: Introductionmentioning
confidence: 99%
“…Its pseudocubic lattice structure (with a cell parameter of 3.84 Å) is compatible with that of silicon (and even PZT) showing resistivity as small as 225µΩ cm at 300K [13]. Several studies have been reported on LNO thin films grown by different deposition techniques using SrTiO 3 and LaAlO 3 as popular substrates [14][15][16]. At the same time, very few systematical studies have been reported regarding deposition of LNO films on oriented SrLaAlO 4 substrates.…”
Section: Introductionmentioning
confidence: 94%