Influence of substrate orientation on the morphologyand orientation of LaNiO₃ thin films

Abstract

SummaryLaNiO 3 thin films were successfully prepared by a chemical method from citrate precursors. The LNO precursor solution was spin-coated onto Si (100) and Si (111) substrates. To obtain epitaxial or highly oriented films, the deposited layers were slowly heated in a gradient thermal field, with a heating rate of 1 • min −1 , and annealed at 700 • C. The influence of different substrate orientations on the thin film morphology was investigated using atomic force microscopy and X-ray diffraction analysis. Well-crystallized films with grains aligned along a certain direction were obtained on both substrates. Films deposited on both substrates were very smooth, but with a different grain size and shape depending on the crystal orientation. Films deposited on Si (100) grew in the (110) direction and had elongated grains, whereas those on Si (111) grew in the (211) direction and had a quasi-square grain shape.

High-Pressure Floating-Zone Growth of Perovskite Nickelate LaNiO3 Single Crystals

“…[8][9][10][11] However, certain fundamental issues surrounding the physics of LaNiO3 remain in question. In particular, whether LaNiO3 is a strongly or weakly correlated metal.…”

“…The perovskite nickelate LaNiO3 has been the subject of intense research in the past decades, ranging from quest for superconductivity in the bulk polycrystalline samples via doping by Bednorz and Müller 1 and in thin films, [2][3][4] triggered by theoretical work of Chaloupka and Khaliullin 5 that predicted the possibility of orbital ordering and high-Tc superconductivity in heterostructures based on LaNiO3, to the possibility of quantum criticality, 6,7 and the applicatio n to thin film substrate selection (e.g., multiferroic materials and ferroelectric device) as seeding or buffer layer. [8][9][10][11] However, certain fundamental issues surrounding the physics of LaNiO3 remain in question. In particular, whether LaNiO3 is a strongly or weakly correlated metal.…”

Low Electrical Resistivity of Ni-Doped La-Cobaltite Thin Films Using a Novel Chemical Solution Route for Thermoelectric Applications

“…Among various preparation techniques for oxide thin films, we choose the chemical solution deposition (CSD) method because it provides high purity, accurate composition control, easy cationic substitutions, and is cost effective as well as scalable. 13,14) While CSD processing of LaNiO 3 has previously been reported, 15,16) the processing is limited by the availability and cost of precursors for the B-site cation, and by the limited stability of the processing solutions. Similar limitations exist for LaCoO 3 , where only three groups have attempted chemical solution processing of films.…”