AES, EELS and TRIM simulation method study of InP(100) subjected to Ar⁺, He⁺and H⁺ions bombardment.

Abstract

Abstract. Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) have been performed in order to investigate the InP(100) surface subjected to ions bombardment. The InP(100) surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV) indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He + or H + ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH 3 , which desorbed from the surface. The chemical susceptibly and the small size of H + advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter) simulation method in order to show the mechanism of interaction between Ar + , He + or H + ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

Phase formation sequence in the Ti/InP system during thin film solid-state reactions

“…It, therefore, appears that this kind of plasma leads to a phosphorus depletion of the InP surface consistently with what was previously reported in the literature. [10][11][12][13] The region situated below this In-rich area appears to be P-rich over a few nanometers. afterwards because of the TiN layer discontinuity.…”

“…Studies concerning the effect of these surface preparations showed that both treatments modify the InP surface's stoichiometry. [10][11][12][13][14] A. Impact of the InP surface preparation…”