Aerosol Jet Printed, Sub‐2 V Complementary Circuits Constructed from <i>P</i>‐ and <i>N</i>‐Type Electrolyte Gated Transistors

Hong, Kihyon; Kim, Yong Hyun; Kim, Se Hyun; Xie, Wei; Xu, Weichao; Kim, Chris H.; Frisbie, C. Daniel

doi:10.1002/adma.201401330

Cited by 95 publications

(75 citation statements)

References 27 publications

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“…The mobility is indeed V G dependent and ranges from ≈2 to 9 cm 2 Vs −1 . This compares favorably with our previous report of electron mobility in EGTs with solution processed ZnO (≈2 cm 2 Vs −1 ) . However, this result also emphasizes a typical complication for thin film EGTs, namely that there is not a single mobility value that captures the behavior of the device.…”

Section: Resultssupporting

confidence: 87%

“…As expected according to Equation

g_{normalm} = \frac{\partial I_{normalD}}{\partial V_{normalG}} = \frac{W}{L} μ C_{normalG} V_{normalD}

g m / W increases linearly with V D , Figure S6a, and is also linear with 1/ L , Figure S6b. For an EGT with W / L = 200 μm/10 μm, ( g m / W) max reaches 19 S m −1 at V D = 1.5 V, Figure S6a, which is ≈5 times higher than the previously reported values for solution‐processed ZnO EGTs, and which compares favorably to electrolyte‐gated polycrystalline Si thin film transistors where g m / W < 1 S m −1 . The high value of ( g m / W) max is due to a combination of the high channel charge density (≈10 μC cm −2 or 10 14 carriers cm −2 ) and the good electron mobility of ALD ZnO, estimated below.…”

Section: Resultsmentioning

confidence: 66%

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Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Bidoky

Tang

et al. 2019

Adv Funct Materials

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A facile, high-resolution patterning process is introduced for fabrication of electrolyte-gated transistors (EGTs) and circuits using a photo-crosslinkable ion gel and stencil-based screen printing. The photo-crosslinkable gel is based on a triblock copolymer incorporating UV-sensitive terminal azide functionality and a common ionic liquid. Using this material in conjunction with conventional photolithography and stenciling techniques, well-defined 0.5-1 µm thick ion gel films are patterned on semiconductor channels as narrow as 10 µm. The resulting n-type ZnO EGTs display high electron mobility (>2 cm 2 Vs −1 ) and on/off current ratios (>10 5 ). Further, EGT-based inverters exhibit static gains >23 at supply voltages below 3 V, and five-stage EGT ring oscillator circuits display dynamic propagation delays of 50 µs per stage. In general, the screen printing and photo-crosslinking strategy provides a clean room-compatible method to fabricate EGT circuits with improved sensitivity (gain) and computational power (gain × oscillating frequency). Detailed device analysis indicates that significantly shorter delay times, of order 1 µs, can be obtained by improving the ion gel conductance.

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Section: Resultssupporting

confidence: 87%

“…As expected according to Equation

g_{normalm} = \frac{\partial I_{normalD}}{\partial V_{normalG}} = \frac{W}{L} μ C_{normalG} V_{normalD}

Section: Resultsmentioning

confidence: 66%

Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Bidoky

Tang

et al. 2019

Adv Funct Materials

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“…Solid-state and gel electrolytes can be processed from solution, and allow for the physical placement of the gate electrode to be decoupled from that of the channel. Such devices have thus been used to control active matrix displays (6), electrochromic pixels (7), and have been used for logic circuitry (8). Biosensing in particular has been a strong beneficiary of the developments in electrolyte-gated transistors (9)(10)(11).…”

mentioning

confidence: 99%

Controlling the mode of operation of organic transistors through side-chain engineering

Giovannitti

Sbircea

Inal

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

412

635

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Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode. Here, we show that the use of glycolated side chains on a thiophene backbone can result in accumulation mode OECTs with high currents, transconductance, and sharp subthreshold switching, while maintaining fast switching speeds. Compared with alkylated analogs of the same backbone, the triethylene glycol side chains shift the mode of operation of aqueous electrolyte-gated transistors from interfacial to bulk doping/transport and show complete and reversible electrochromism and high volumetric capacitance at low operating biases. We propose that the glycol side chains facilitate hydration and ion penetration, without compromising electronic mobility, and suggest that this synthetic approach can be used to guide the design of organic mixed conductors.organic electronics | electrochemical transistor | semiconducting polymers

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“…In addition the scarcity of n-type organic semiconductors and p-type inorganic semiconductors leads to missing complementary circuits in both domains, 11 except their realization in hybrid systems. 2,12 Lithographically patterned ring oscillator structures based on organic field-effect transistors (OFETs) are able to perform at high frequency (200 kHz) but at the same time require high supply voltage (-60 V). 13 All-printed ring oscillators, where the passive structures are also printed, based on OFETs operate at high supply voltages (∼ −40 V) with frequencies below 5 Hz.…”

mentioning

confidence: 99%

Digital power and performance analysis of inkjet printed ring oscillators based on electrolyte-gated oxide electronics

Marques

Garlapati

Dehm

et al. 2017

Applied Physics Letters

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Printed electronic components offer certain technological advantages over their silicon based counterparts, like mechanical flexibility, low process temperatures, maskless and additive manufacturing possibilities. However, to be compatible to the fields of smart sensors, Internet of Things and wearables, it is essential that devices operate at small supply voltages. In printed electronics mostly silicon dioxide or organic dielectrics with low dielectric constants have been used as gate isolators, which in turn has resulted in high power transistors operable only at tens of volts. Here, we present inkjet printed circuits which are able to operate at supply voltages as low as ≤ 2 V. Our transistor technology is based on lithographically patterned drive electrodes, the dimensions of which are carefully kept well within the printing resolutions; the oxide semiconductor, the electrolytic insulator and the top-gate electrodes have been inkjet printed. Our inverters show a gain of ∼ 4 and 2.3 ms propagation delay time at 1 V supply voltage. Subsequently built 3-stage ring oscillators start to oscillate at a supply voltage of only 0.6 V with a frequency of ∼ 255 Hz and can reach frequencies up to ∼ 350 Hz at 2 V supply voltage. Furthermore, we have introduced a systematic methodology for characterizing ring oscillators in the printed electronics domain, which has been largely missing. Benefiting from this procedure, we are now able to predict the switching capacitance and driver capability at each stage, as well as the power consumption of our inkjet printed ring oscillators. These achievements will be essential for analyzing the performance and power characteristics of future inkjet printed digital circuits.The application domains such as Internet of Things (IoT), smart sensors and wearables may benefit from printed electronics (PE) technology where the devices can be printed onto flexible or rigid substrates. Most of the devices in PE, are based on organic materials and suffer from high supply voltage requirements (> 10 V). 1-3 On the other hand, some examples of low voltage organic devices can also be found in the literature. 2,4-10 The reasons behind the need of high supply voltages is the low carrier mobility of p-type organic materials and low performance of printed or vacuum deposited gate dielectrics that have been used. In addition the scarcity of n-type organic semiconductors and p-type inorganic semiconductors leads to missing complementary circuits in both domains, 11 except their realization in hybrid systems. 2,12 Lithographically patterned ring oscillator structures based on organic field-effect transistors (OFETs) are able to perform at high frequency (200 kHz) but at the same time require high supply voltage (-60 V). printed, based on OFETs operate at high supply voltages (∼ −40 V) with frequencies below 5 Hz. 14,15 An OFET based 11-stage ring oscillator operating at only 3 V supply with a frequency of 1.7 Hz was also reported in literature. 7 By using an complementary design, the frequency was increase...

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Aerosol Jet Printed, Sub‐2 V Complementary Circuits Constructed from P‐ and N‐Type Electrolyte Gated Transistors

Cited by 95 publications

References 27 publications

Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Controlling the mode of operation of organic transistors through side-chain engineering

Digital power and performance analysis of inkjet printed ring oscillators based on electrolyte-gated oxide electronics

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