Advantages and disadvantages of sulfur passivation of InAs/GaSb superlattice waveguide photodiodes

Hoffmann, J.; Lehnert, Tibor; Hoffmann, D.; Fouckhardt, Henning

doi:10.1088/0268-1242/24/6/065008

Cited by 26 publications

(17 citation statements)

References 24 publications

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“…All of these techniques require additional special equipments or advanced procedures of preparation and are less effective or even destructive when they are utilized singly [7]. One of the most simple way to passivate the III-V materials is to treat with sulphur or fluorine chemistry.…”

Section: Introductionmentioning

confidence: 99%

Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

et al. 2017

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We report on the investigation of the surface leakage current for InAs1−xSbx (x = 0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩcm, respectively, at 150 K and 1340, 429, 2870 kΩcm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices.

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Section: Introductionmentioning

confidence: 99%

Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

et al. 2017

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“…The studies have been performed mainly in InAs/AlSb structures aimed for mid-IR (see, e. g. [1][2][3] and references therein) and THz [4] photodetectors, quantum cascade lasers operating in the spectral range of 2.3 to 5 μm (e. g. [5][6][7]) and fast hot-electron transistors [8]. Transport properties of superlattices (SLs) (mainly GaAs-based SLs) have been studied in detail because of expected Bloch wave amplification, which is promising for THz generation (see, e. g. review [9]).…”

Section: Introductionmentioning

confidence: 99%

Non-resonant tunnelling in short-period superlattices with optical cavities

Kagan¹,

Алтухов²,

Paprotskiy³

et al. 2014

Lith. J. Phys.

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The vertical transport in short-period InAs/AlSb and GaAs/AlAs superlattices was studied. The negative differential conductivity was observed in a miniband transport regime as a result of the overlapping of confined states in a periodic quantum well structure (Esaki-Tsu mechanism). Several maxima appeared on current-voltage characteristics of the superlattices found in the non-resonant tunnelling regime. They are shown to be due to the influence of the optical cavity on optical transitions within quantum wells (Purcell effect).

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“…Sulphur passivation is an effective passivation method and is easy to apply but the effect of passivation is temporary making it impractical [6]. Sulphur replaces oxygen in conductive surface oxides (Ga 2 O 3 , In 2 O 3 , GaO 2 … etc) and saturates the dangling bonds [7]. Sulphur is generally applied using ammonium sulfide, sodium sulfide or zinc sulfide solutions.…”

Section: Introductionmentioning

confidence: 99%

Thiol passivation of MWIR type II superlattice photodetectors

2013

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Poor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps leading to surface leakage currents that short circuit diode action. Good passivation, therefore, is critical in the fabrication of high performance devices. Silicondioxide has been the main stay of passivation for commercial photodetectors, deposited at high temperatures and high RF powers using plasma deposition techniques. In photodetectors based on III-V compounds, sulphur passivation has been shown to replace oxygen and saturate the dangling bonds. Despite its effectiveness, it degrades over time. More effort is required to create passivation layers which eliminate surface leakage current. In this work, we propose the use of sulphur based octadecanethiol (ODT), CH 3 (CH 2 ) 17 SH, as a passivation layer for the InAs/GaSb superlattice photodetectors that acts as a self assembled monolayer (SAM). ODT SAMs consist of a chain of 18 carbon atoms with a sulphur atom at its head. ODT Thiol coating is a simple process that consist of dipping the sample into the solution for a prescribed time. Excellent electrical performance of diodes tested confirm the effectiveness of the sulphur head stabilized by the intermolecular interaction due to van der Walls forces between the long chains of ODT SAM which results in highly stable ultrathin hydrocarbon layers without long term degradation.

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Advantages and disadvantages of sulfur passivation of InAs/GaSb superlattice waveguide photodiodes

Cited by 26 publications

References 24 publications

Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

Non-resonant tunnelling in short-period superlattices with optical cavities

Thiol passivation of MWIR type II superlattice photodetectors

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