Advances toward reliable high density Cu-Cu interconnects by Cu-SiO<sub>2</sub> direct hybrid bonding

Beilliard, Yann; Moreau, S.; Cioccio, L. Di; Coudrain, P.; Romano, G.; Nowodzinski, A.; Aussenac, F.; Jouneau, Pierre‐Henri; Rolland, E.; Signamarcheix, T.

doi:10.1109/3dic.2014.7274306

Cited by 25 publications

(5 citation statements)

References 10 publications

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“…Pillar et al [ 5 ] stated that the bonding can be stabilized using high-bonding temperature and pressure. Similar findings were also reported in the previous study [ 6 ]. Void density in the bonding can be suppressed by pre-bonding surface passivation [ 7 ].…”

Section: Introductionsupporting

confidence: 93%

Failures of Cu-Cu Joints under Temperature Cycling Tests

et al. 2022

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In this study, the failure mechanisms of Cu-Cu joints under thermal cycling were investigated. Two structures of dielectrics (PBO/underfill/PBO and SiO2) were employed to seal the joints. Stress gradients induced in the joints with the different dielectrics were simulated using a finite element method (FEM) and correlated with experimental observations. We found that interfacial voids were forced to move in the direction from high stress regions to low stress ones. The locations of migrated voids varied with the dielectric structures. Under thermal cycling, such voids were likely to move forward to the regions with a small stress change. They relocated and merged with their neighboring voids to lower the interfacial energy.

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Section: Introductionsupporting

confidence: 93%

Failures of Cu-Cu Joints under Temperature Cycling Tests

et al. 2022

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“…It is also called a Cu/SiO 2 hybrid bonding as the direct bonding interface is Cu metal vias and SiO 2 dielectrics. [13] Here, the up-to-date Cu-Cu direct bonding technology of the industries is investigated and its technical challenges and…”

Section: Doi: 101002/admt202202134mentioning

confidence: 99%

“…It is also called a Cu/SiO 2 hybrid bonding as the direct bonding interface is Cu metal vias and SiO 2 dielectrics. [ 13 ]…”

Section: Introductionmentioning

confidence: 99%

Advanced Cu/Polymer Hybrid Bonding System for Fine‐Pitch 3D Stacking Devices

Park

Kang

Kim

et al. 2023

Adv Materials Technologies

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Hybrid bonding enables the commercialization of ultra‐fine pitch high‐density 3D packages. Cu/SiO2 hybrid bonding is the standard packing interface recently introduced in the industry. Here, the Cu/polymer hybrid bonding interface beyond Cu/SiO2 is proposed in order to have high compatibility for additional processes in the future. Ideally, polymers can provide excellent bonding strength and low permittivity, enabling high‐speed signal transmission with high reliability. To realize it, optimum polymer and additives selection and polymer bonding processing development are needed to get the desired packaging interface. Therefore, detailed materials and processing challenges are discussed to realize the successful Cu/polymer hybrid bonding. Then, the authors’ preliminary results are suggested to supplement the feasibility of the emerging bonding technology.

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“…The existing bonding process has low processing performance, and scaling to a pitch smaller than 40 µm is difficult [85]. Thus, to achieve the ultrafine pitch required for future high-performance devices, hybrid bonding is essential [287].…”

Section: Hybrid-bonding Of Cu and Sio2mentioning

confidence: 99%

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Jang,

Sharma,

Jung

2023

Materials

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Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for achieving high-density integration, high-speed connectivity, and for downsizing of electronic devices. This paper describes recent developments in TSV fabrication and bonding methods in advanced 3D electronic packaging. In particular, the authors have overviewed the recent progress in the fabrication of TSV, various etching and functional layers, and conductive filling of TSVs, as well as bonding materials such as low-temperature nano-modified solders, transient liquid phase (TLP) bonding, Cu pillars, composite hybrids, and bump-free bonding, as well as the role of emerging high entropy alloy (HEA) solders in 3D microelectronic packaging. This paper serves as a guideline enumerating the current developments in 3D packaging that allow Si semiconductors to deliver improved performance and power efficiency.

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Advances toward reliable high density Cu-Cu interconnects by Cu-SiO₂ direct hybrid bonding

Cited by 25 publications

References 10 publications

Failures of Cu-Cu Joints under Temperature Cycling Tests

Failures of Cu-Cu Joints under Temperature Cycling Tests

Advanced Cu/Polymer Hybrid Bonding System for Fine‐Pitch 3D Stacking Devices

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

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Advances toward reliable high density Cu-Cu interconnects by Cu-SiO2 direct hybrid bonding

Cited by 25 publications

References 10 publications

Failures of Cu-Cu Joints under Temperature Cycling Tests

Failures of Cu-Cu Joints under Temperature Cycling Tests

Advanced Cu/Polymer Hybrid Bonding System for Fine‐Pitch 3D Stacking Devices

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Contact Info

Product

Resources

About

Advances toward reliable high density Cu-Cu interconnects by Cu-SiO₂ direct hybrid bonding