Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth

Abstract. For discovering the principle of processing parameter combination for the stable growth and better wafer quality of ĭ450 mm Czochralski grown silicon single crystal (shortly called Cz silicon crystal), the effects of crystal rotation rate and crucible one on the V/G ratio were simulated by using CGSim software. The results show that their effect laws on the V/G ratio for ĭ450 mm Cz silicon crystal growth are some different from that for ĭ200 mm Cz silicon one, and the effects of crucible rotation rate are relatively smaller than that of crystal one and its increasing only makes the demarcation point between two regions with different V/G ratio variations outward move along radial direction, and it promotes the wafer quality to weaken crystal rotation rate and strengthen crucible one.

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“…Previous experiments confirmed the correct predictions simulated by the software [6][7][8]. The main structure of the furnace is showed in Fig.…”

Section: Model Descriptionsupporting

confidence: 77%

Simulation ofV/GDuring Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates

Guan

Zhang

2016

MATEC Web Conf.

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“…Turbulent natural convection in large melt volumes have been studied in recent works [3][4][5][6]. According to Kumar V et al [7] the effect of surface tension gradients was neglected in several studies on silicon growth because of the weakness of Prandtl number (Pr=0.0113).…”

Section: Introductionmentioning

confidence: 99%

Forced and thermocapillary convection in silicon Czochralski crystal growth in semispherical crucible

Mokhtari

Bouabdallah

Zizi

et al. 2010

J. Phys.: Conf. Ser.

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Abstract. In order to understand the influence of a semispherical crucible geometry combined with different convection modes as a thermocapillary convection, natural convection and forced convection, induced by crystal rotation, on melt flow pattern in silicon Czochralski crystal growth process, a set of numerical simulations are conducted using Fluent Software. We solve the system of equations of heat and momentum transfer in classical geometry as cylindrical and modified crystal growth process geometry as cylindro-spherical. In addition, we adopt hypothesis adapted to boundary conditions near the interface and calculations are executed to determine temperature, pressure and velocity fields versus Grashof and Reynolds numbers. The analysis of the obtained results led to conclude that there is advantage to modify geometry in comparison with the traditional one. The absence of the stagnation regions of fluid in the hemispherical crucible corner and the possibility to control the melt flow using the crystal rotation enhances the quality of the process comparatively to the cylindrical one. The pressure field is strongly related to the swirl velocity.

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“…The effect of natural convection on the growth in the traditional system (cylindrical crucible) was studied by several researchers; N. Kobayashi [1] and W. E. Langlois [2] were the first to do it. Turbulent natural convection in large melt volumes have been studied in recent works [3][4][5][6]. V. Kumar et al [7] showed in their paper that the Marangoni convection influences the thermal and dynamic field in the melt.…”

Section: Introductionmentioning

confidence: 99%

Combined effects of crucible geometry and Marangoni convection on silicon Czochralski crystal growth

Mokhtari¹,

Bouabdallah²,

Zizi³

et al. 2009

Cryst. Res. Technol.

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In order to understand the influence of crucible geometry combined with natural convection and Marangoni convection on melt flow pattern, temperature and pressure fields in silicon Czochralski crystal growth process, a set of numerical simulations was conducted. We carry out calculation enable us to determine temperature, pressure and velocity fields in function of Grashof and Marangoni numbers. The essential results show that the hemispherical geometry of crucible seems to be adapted for the growth of a good quality crystal and the pressure field is strongly affected by natural and Marangoni convection and it is more sensitive than temperature.

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Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth

Cited by 57 publications

References 16 publications

Simulation ofV/GDuring Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates

Simulation ofV/GDuring Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates

Forced and thermocapillary convection in silicon Czochralski crystal growth in semispherical crucible

Combined effects of crucible geometry and Marangoni convection on silicon Czochralski crystal growth

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