Thermal convection induced simultaneously by horizontal temperature gradient and vibration in a rectangular cavity filled with molten silicon is investigated numerically and theoretically. The time averaged equations of convection are solved in the high-frequency vibration approximation. The Chebyshev spectral collocation method and a Newton-type method based on the Frechet derivative are used in the numerical solution of the streamfunction formulation of the incompressible Navier-Stokes equations. Validation by comparison with previous works has been performed. Different values of the Grashof number Gr and vibrational Grashof number Gr v and all the possible orientations of the vibrations are considered. Numerical results show that depending on the vibration direction, the flow can be amplified or damped, with even the possibility of flow inversion which can occur between critical vibration angles 1 and 2. A general theoretical expression is derived relating these critical angles and the ratio of vibrational to buoyant convection parameters, Gr v /Gr. A very good agreement between the theoretical and numerical results is obtained.

In order to understand the influence of crucible geometry combined with natural convection and Marangoni convection on melt flow pattern, temperature and pressure fields in silicon Czochralski crystal growth process, a set of numerical simulations was conducted. We carry out calculation enable us to determine temperature, pressure and velocity fields in function of Grashof and Marangoni numbers. The essential results show that the hemispherical geometry of crucible seems to be adapted for the growth of a good quality crystal and the pressure field is strongly affected by natural and Marangoni convection and it is more sensitive than temperature.

1.5 and 2 inch LGT, langatate (La3Ga5.5Ta0.5O14) crystals along the X[100], Y[120] and Z[001]-directions were successfully grown by the Czochralski technique.