2006 19th International Vacuum Nanoelectronics Conference 2006
DOI: 10.1109/ivnc.2006.335333
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Advances in Specimen Preparation for Atom Probe Tomography

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“…It has also been shown that the large field of view in LEAP allows for analysis of larger features, such as whole transistor devices. 8 As mentioned above, in the conventional 3-DAP field evaporation is generated by nanosecond high voltage pulses. This requires a high degree of conductivity of the specimen, which has been one of the major limitations of the technique since it only allowed for studies of metals and highly doped semiconductors.…”
Section: Short Description Of Basic Principles Of 3-dap and Eftem Wor...mentioning
confidence: 99%
“…It has also been shown that the large field of view in LEAP allows for analysis of larger features, such as whole transistor devices. 8 As mentioned above, in the conventional 3-DAP field evaporation is generated by nanosecond high voltage pulses. This requires a high degree of conductivity of the specimen, which has been one of the major limitations of the technique since it only allowed for studies of metals and highly doped semiconductors.…”
Section: Short Description Of Basic Principles Of 3-dap and Eftem Wor...mentioning
confidence: 99%