Advances in Molecular Electronics: A Brief Review

Mathew, Paven Thomas; Fang, Fengzhou

doi:10.1016/j.eng.2018.11.001

Cited by 73 publications

(61 citation statements)

References 146 publications

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“…Many attempts have been made in the late 90s to pattern oxide structures as the application for developing nanoscale electronic devices [82][83][84][85]. These experiments are further extended to attain atomic layer removal for the application of fabricating nanoelectrodes, which are essential for developing molecular electronic devices such as transistors and switches [39,40,48,86,87]. Also, nanometric cutting over monocrystalline silicon under high vacuum conditions in a scanning electron microscope (SEM) has also been developed to study the nanoscale material removal behavior [88].…”

Section: Silicon: the Most Widely Used Semiconductor Materials In The mentioning

confidence: 99%

Atomic and Close-to-Atomic Scale Manufacturing: A Review on Atomic Layer Removal Methods Using Atomic Force Microscopy

Mathew

Rodriguez

2020

Nanomanuf Metrol

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Manufacturing at the atomic scale is the next generation of the industrial revolution. Atomic and close-to-atomic scale manufacturing (ACSM) helps to achieve this. Atomic force microscopy (AFM) is a promising method for this purpose since an instrument to machine at this small scale has not yet been developed. As the need for increasing the number of electronic components inside an integrated circuit chip is emerging in the present-day scenario, methods should be adopted to reduce the size of connections inside the chip. This can be achieved using molecules. However, connecting molecules with the electrodes and then to the external world is challenging. Foundations must be laid to make this possible for the future. Atomic layer removal, down to one atom, can be employed for this purpose. Presently, theoretical works are being performed extensively to study the interactions happening at the molecule–electrode junction, and how electronic transport is affected by the functionality and robustness of the system. These theoretical studies can be verified experimentally only if nano electrodes are fabricated. Silicon is widely used in the semiconductor industry to fabricate electronic components. Likewise, carbon-based materials such as highly oriented pyrolytic graphite, gold, and silicon carbide find applications in the electronic device manufacturing sector. Hence, ACSM of these materials should be developed intensively. This paper presents a review on the state-of-the-art research performed on material removal at the atomic scale by electrochemical and mechanical methods of the mentioned materials using AFM and provides a roadmap to achieve effective mass production of these devices.

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Section: Silicon: the Most Widely Used Semiconductor Materials In The mentioning

confidence: 99%

Atomic and Close-to-Atomic Scale Manufacturing: A Review on Atomic Layer Removal Methods Using Atomic Force Microscopy

Mathew

Rodriguez

2020

Nanomanuf Metrol

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“…Driven by the demand for higher performance capabilities, computer technology continues to stimulate the exploration of innovative materials and methodologies for the construction of logic gates. To this end, extension of information processing and computation to the molecular level can be achieved through the development of a molecular-level electronic set capable of executing functions that mimic those performed by macroscopic components (Sun et al, 2014;Mathew and Fang, 2018).…”

Section: Introductionmentioning

confidence: 99%

A Reconfigurable, Dual-Output INHIBIT and IMPLICATION Molecular Logic Gate

et al. 2020

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Molecules that respond to input stimulations to produce detectable outputs can be exploited to mimic Boolean logic operators and reproduce basic arithmetic functions. We have designed a two-state fluorescent probe with tunable emission wavelength for the construction of a molecular logic gate with reconfigurable single-or dual-output capability. The system is based on a BODIPY skeleton coupled with 4-(dimethylamino)benzaldehyde. The behavior of the molecular logic gate can be easily investigated in solution with fluorescence spectroscopy, and the optical readout (fluorescence) can be monitored in one (green) or two (green and red) channels. Depending on the solvent of choice, single INHIBIT or dual INHIBIT/IMPLY logic functions can be achieved using chemical inputs (acid and base). Reconfiguration from single-to dual-output is thus made possible by operating the system in acetonitrile (single output) or toluene (dual output), respectively. The logic gate can be switched by manipulating the fluorescence emission via protonation or deprotonation, even when immobilized onto a glass substrate. At the solid state, the resulting output can be stored for extended periods of time. This feature provides two added benefits: (i) memory function and (ii) "set/reset" capability of the logic gate. Our design thus provides a proof-of-concept interface between the molecular and electronic domains.

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“…Kondo physics has since been observed in a large variety of nanoscale devices, ranging from the original GaAs/AlGaAs [6] and Si/SiGe [7] heterostructures to more exotic devices involving single-molecule junctions [8][9][10][11] or carbon nanotubes [12]. The sharpness of the concomitant zero-bias or Abrikosov-Suhl-Kondo resonance in the differential conductance [6][7][8][12][13][14][15] offers an attractive way to implement highly sensitive switching properties on which, e.g., future molecular electronics might depend [16,17].…”

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confidence: 99%

“…Like other quantum phenomena, the resonant spin-flip correlations underlying the Kondo effect are limited to very low temperatures and persist only up to some tens of mK in the usual semiconductor-based devices, or at best some tens of kelvin in molecular electronics [11,16], although Kondo temperatures as high as 100 K have been reported for magnetic impurities on surfaces [18,19].…”

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confidence: 99%

“…The possibility to observe Kondo-assisted electronic transport in an otherwise Coulomb-blocked quantum dot (QD) hinges on the fact that a singly occupied dot level is available for resonant tunneling from the leads, and is thus generally directly controlled via the gate voltage [6,7,16]. For the ⊥-shaped device proposed in this paper by contrast, schematically depicted in Fig.…”

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Kondo-assisted switching between three conduction states in capacitively coupled quantum dots

Lombardo

Hayn

Zhuravel

et al. 2020

Phys. Rev. Research

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We propose a nanoscale device consisting of a double quantum dot with strong intra-and interdot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the upper dot. At low temperatures, our calculations predict the double dot to pass through a narrow Kondo regime, resulting in highly sensitive switching characteristics between three well-defined statesinsulating, normal conduction, and resonant conduction.

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Advances in Molecular Electronics: A Brief Review

Cited by 73 publications

References 146 publications

Atomic and Close-to-Atomic Scale Manufacturing: A Review on Atomic Layer Removal Methods Using Atomic Force Microscopy

Atomic and Close-to-Atomic Scale Manufacturing: A Review on Atomic Layer Removal Methods Using Atomic Force Microscopy

A Reconfigurable, Dual-Output INHIBIT and IMPLICATION Molecular Logic Gate

Kondo-assisted switching between three conduction states in capacitively coupled quantum dots

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