Advances in GaAs HBT power amplifiers for cellular phones and military applications

Ali, F.; Gupta, Aditya K.; Higgins, A.

doi:10.1109/mcs.1996.506304

Cited by 11 publications

(4 citation statements)

References 23 publications

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“…such as RF power amplifiers in cellular phones. 4,5 Traditional materials used for epitaxial layers of HBT include silicon/ silicon−germanium alloys, 6 aluminum gallium arsenide/gallium arsenide, and indium phosphide/indium gallium arsenide. The advent of atomically thin two-dimensional (2D) crystals has sparked a paradigm shift in nanotechnology.…”

mentioning

confidence: 99%

“…The heterojunction bipolar transistor (HBT) is very similar to the BJT, but uses different semiconductor materials with different bandgaps for the emitter and base regions instead. , Compared to BJT, HBT can be operated at very high frequencies, up to several hundred GHz. It is commonly used in radio frequency (RF) systems such as RF power amplifiers in cellular phones. , Traditional materials used for epitaxial layers of HBT include silicon/silicon–germanium alloys, aluminum gallium arsenide/gallium arsenide, and indium phosphide/indium gallium arsenide.…”

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confidence: 99%

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Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

et al. 2017

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High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe-MoS junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.

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confidence: 99%

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confidence: 99%

Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

et al. 2017

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“…Since the power amplifier is located at the final stage of the transmitter, its efficiency influences the system's overall efficiency. PAs are found in the realization of the many microwaves and millimeter-wave systems including radar and antenna systems [2][3][4][5][6][7][8], cellular phones [9][10][11], electronic warfare [12,13], heating [14,15], and also many other applications that highlight the importance of such component. Due to the wide variety of PA applications, from wireless communication handsets to heating and electronic warfare, PA is designed and biased in a suitable class to satisfy the desired parameters.…”

Section: Introductionmentioning

confidence: 99%

Design and fabrication of a GaN HEMT power amplifier based on hidden Markov model for wireless applications

et al. 2023

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Improvement of power amplifier’s performance is the desired topic in communication systems. There are many efforts are made to provide good input and output matching, high efficiency, sufficient power gain and appropriate output power. This paper presents a power amplifier with optimized input and output matching networks. In the proposed approach, a new structure of the Hidden Markov Model with 20 hidden states is used for modeling the power amplifier. The widths and lengths of the microstrip lines in the input and output matching networks are defined as the parameters that the Hidden Markov Model should optimize. For validating our algorithm, a power amplifier has been realized based on a 10W GaN HEMT with part number CG2H40010F from the Cree corporation. Measurement results have shown a PAE higher than 50%, a Gain of about 14 dB, and input and output return losses lower than -10 dB over the frequency range of 1.8–2.5 GHz. The proposed PA can be used in wireless applications such as radar systems.

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“…Also results were published for Garb HBT's [2], HEMTs [3] or even SIC MES-FE% [4] and SiGe HBT's. On the silicon front goold results were obtained with lateral DMOS transistors [5].…”

Section: Introductionmentioning

confidence: 99%

High gain, high efficiency, low voltage, medium power Si-bipolar transistor suitable for integration

Rijs

Dekker²,

Magnee³

et al.

1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Technical Papers

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Medium power transistors in a high performance double polysillicon bipolar process have been fabricated. On-wafer loadpull measurements show high gain (15 dB) and high maximum efficiency (60%) at 1.8 GHz with 27 dBm of output power. These results were obtained with a low supply voltage of 3.5 V. More importantly, these results were obtainedl with transistors with a buried layer having a collector contact at the tolp, which makes it possible to integrate power ampliiers on chip.

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Advances in GaAs HBT power amplifiers for cellular phones and military applications

Cited by 11 publications

References 23 publications

Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

Design and fabrication of a GaN HEMT power amplifier based on hidden Markov model for wireless applications

High gain, high efficiency, low voltage, medium power Si-bipolar transistor suitable for integration

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