Advances in atmospheric pressure PECVD: The influence of plasma parameters on film morphology

Hodgkinson, John L.; Sheel, David W.

doi:10.1016/j.surfcoat.2013.06.079

Cited by 10 publications

(7 citation statements)

References 16 publications

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“…All films deposited on glass and c‐Si contained C impurities and only those on glass contained N impurities. The chemical composition of the films was comparable to some of the plasma‐enhanced CVD TiO 2 films (different process pressure and precursor) in the literature . The films deposited by the CVD using the microplasma printer can be considered as a potential candidate for applications in which high density TiO 2 is not required, such as for example in certain gas‐sensing applications or as electrode in perovskite solar cells …”

Section: Resultssupporting

confidence: 52%

TiO₂ thin film patterns prepared by chemical vapor deposition and atomic layer deposition using an atmospheric pressure microplasma printer

Aghaee

Verheyen

Stevens³

et al. 2019

Plasma Processes & Polymers

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A microplasma printer is employed to deposit thin film patterns of TiO2 by titanium tetra‐isopropoxide and N2/O2 plasma at atmospheric pressure. The setup is adopted to carry out deposition in two configurations, namely under chemical vapor deposition (CVD) and atomic layer deposition (ALD) modes. The properties of TiO2, as well as the patterning resolution, are investigated. The amorphous TiO2 deposited in the CVD mode contains a relatively high level of impurities (residual carbon content of 5–10 at.%) and is characterized by a low refractive index of 1.8. With the ALD mode on the other hand, TiO2 is obtained with a low level of impurities (<1 at.% C and <2 at.% N), a refractive index of 1.98, and a growth per cycle of 0.15 nm. Furthermore, the spatial resolution for a 8‐nm‐thick film is determined by X‐ray photoelectron spectroscopy line scan and found to be equal to 2,000 and 900 µm for the CVD and ALD modes, respectively. This study can be regarded as the first step toward area‐selective CVD and ALD of TiO2 by a microplasma printer, which can be further explored and extended to other material systems.

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Section: Resultssupporting

confidence: 52%

TiO₂ thin film patterns prepared by chemical vapor deposition and atomic layer deposition using an atmospheric pressure microplasma printer

Aghaee

Verheyen

Stevens³

et al. 2019

Plasma Processes & Polymers

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“…The AP plasma CVD reactor used for the described work was designed and constructed in‐house to provide in situ plasma activation of atmospheric pressure CVD processes. A full description of the apparatus has been published previously by the authors . The plasma was driven by a switched DC supply capable of delivering high‐voltage pulses of sub‐microsecond duration at repetition rates up to 100 kHz achieved by varying the period between the 4.5 kV, 500 ns voltage pulses.…”

Section: Methodsmentioning

confidence: 99%

Durable high-performance anti-reflection coatings via atmospheric pressure processing

Yates

Hodgkinson

Tandy

2015

Phys. Status Solidi A

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Anti-reflection layers are critical to the performance of many optical systems, including large area, cost sensitive products such as displays, architectural glazing, photovoltaics, and solar thermal collectors. The action of such layers is a product of a low-refractive index, which can be achieved by multi-layer interference stacks or (as in this work) via porous structures whereby air filled voids provide a net reduction in index, minimizing the reflection at each interface. In this work, we use flame assisted CVD (FACVD) generated anti-reflection layers which produce controllably porous silica film. Such films can also be grown with a graded refractive index, resulting in a highly effective anti-reflection coating. A further critical property is the durability of the films and their optical properties as performance can be lost due to environmental contamination and moisture ingress. We report on use of additional thin organic films, which could significantly enhance such durability.

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“…TiO 2 has three naturally occurring polymorphs, anatase, brookite, and rutile [1]. Usually, anatase requires a substrate temperature over 450 • C and in excess of 550 • C to prepared rutile [12]. Anatase has larger band gap (3.2 eV) than that (3.0 eV) of rutile and the photocatalytic activity of anatase is obviously superior to that of rutile [13].…”

Section: Introductionmentioning

confidence: 99%

The Effects of Thermal and Atmospheric Pressure Radio Frequency Plasma Annealing in the Crystallization of TiO2 Thin Films

Zhang

et al. 2019

Coatings

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Amorphous TiO2 thin films were respectively annealed by 13.56 MHz radio frequency (RF) atmospheric pressure plasma at discharge powers of 40, 60, 80 W and thermal treatment at its corresponding substrate temperature (Ts). Ts was estimated through three measurement methods (thermocouple, Newton’s law of cooling and OH optical emission spectra simulation) and showed identically close results of 196, 264 and 322 °C, respectively. Comparing with thermal annealing, this RF atmospheric pressure plasma annealing process has obvious effects in improving crystallization of the amorphous films, based on the XRD and Raman analysis of the film. Amorphous TiO2 film can be changed to anatase film at about 264 °C of Ts for 30 min plasma treatment, while it almost remains amorphous after 322 °C thermal treatment for the same time.

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Advances in atmospheric pressure PECVD: The influence of plasma parameters on film morphology

Cited by 10 publications

References 16 publications

TiO₂ thin film patterns prepared by chemical vapor deposition and atomic layer deposition using an atmospheric pressure microplasma printer

TiO₂ thin film patterns prepared by chemical vapor deposition and atomic layer deposition using an atmospheric pressure microplasma printer

Durable high-performance anti-reflection coatings via atmospheric pressure processing

The Effects of Thermal and Atmospheric Pressure Radio Frequency Plasma Annealing in the Crystallization of TiO2 Thin Films

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Advances in atmospheric pressure PECVD: The influence of plasma parameters on film morphology

Cited by 10 publications

References 16 publications

TiO2 thin film patterns prepared by chemical vapor deposition and atomic layer deposition using an atmospheric pressure microplasma printer

TiO2 thin film patterns prepared by chemical vapor deposition and atomic layer deposition using an atmospheric pressure microplasma printer

Durable high-performance anti-reflection coatings via atmospheric pressure processing

The Effects of Thermal and Atmospheric Pressure Radio Frequency Plasma Annealing in the Crystallization of TiO2 Thin Films

Contact Info

Product

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TiO₂ thin film patterns prepared by chemical vapor deposition and atomic layer deposition using an atmospheric pressure microplasma printer

TiO₂ thin film patterns prepared by chemical vapor deposition and atomic layer deposition using an atmospheric pressure microplasma printer