Advancements in Solution Processable Devices using Metal Oxides For Printed Internet-of-Things Objects

Berger, Paul R.; Li, Miao; Mattei, Ryan M.; Niang, Maimouna A.; Talisa, Noah; Tripepi, Michael; Harris, B.; Bhalerao, Sagar R.; Chowdhury, Enam; Winter, Charles H.; Lupo, Donald

doi:10.1109/edtm.2019.8731322

Cited by 4 publications

(3 citation statements)

References 6 publications

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“…[48][49][50] Such TEG technologies are promising for self-powered electronic applications in the rapidly emerging internet-of-things (IoT) device ecosystem. [51][52][53][54][55][56][57] Herein, we review recent progress in the science and technology of semiconducting CQDs-based thermoelectrics. The review begins with an introduction to the fundamental concepts underpinning thermoelectricity in semiconductor nanostructures.…”

Section: Introductionmentioning

confidence: 99%

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Recent Progress in Colloidal Quantum Dot Thermoelectrics

et al. 2023

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Semiconducting colloidal quantum dots (CQDs) represent an emerging class of thermoelectric materials for use in a wide range of future applications. CQDs combine solution processability at low temperatures with the potential for upscalable manufacturing via printing techniques. Moreover, due to their low dimensionality, CQDs exhibit quantum confinement and a high density of grain boundaries, which can be independently exploited to tune the Seebeck coefficient and thermal conductivity, respectively. This unique combination of attractive attributes makes CQDs very promising for application in emerging thermoelectric generator (TEG) technologies operating near room temperature. Herein, recent progress in CQDs for application in emerging thin‐film thermoelectrics is reviewed. First, the fundamental concepts of thermoelectricity in nanostructured materials are outlined, followed by an overview of the popular synthetic methods used to produce CQDs with controllable sizes and shapes. Recent strides in CQD‐based thermoelectrics are then discussed with emphasis on their application in thin‐film TEGs. Finally, the current challenges and future perspectives for further enhancing the performance of CQD‐based thermoelectric materials for future applications are discussed.

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Section: Introductionmentioning

confidence: 99%

“…[ 48–50 ] Such TEG technologies are promising for self‐powered electronic applications in the rapidly emerging internet‐of‐things (IoT) device ecosystem. [ 51–57 ]…”

Section: Introductionmentioning

confidence: 99%

Recent Progress in Colloidal Quantum Dot Thermoelectrics

et al. 2023

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“…Some of these applications can require substrates, like flexible, transparent, organic, paper, among others [ 1 ]. In this context, film deposition from precursor solutions appears to be a potential tool for novel materials and electronic device fabrication techniques [ 2 , 3 ].…”

Section: Introductionmentioning

confidence: 99%

Impact of the Semiconductor Defect Density on Solution-Processed Flexible Schottky Barrier Diodes

et al. 2022

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Schottky barrier diodes, developed by low-cost techniques and low temperature processes (LTP-SBD), have gained attention for different kinds of novel applications, including flexible electronic fabrication. This work analyzes the behavior of the I–V characteristic of solution processed, ZnO Schottky barrier diodes, fabricated at a low temperature. It is shown that the use of standard extraction methods to determine diode parameters in these devices produce significant dispersion of the ideality factor with values from 2.2 to 4.1, as well as a dependence on the diode area without physical meaning. The analysis of simulated I–V characteristic of LTP-SBD, and its comparison with experimental measurements, confirmed that it is necessary to consider the presence of a density of states (DOS) in the semiconductor gap, to understand specific changes observed in their performance, with respect to standard SBDs. These changes include increased values of Rs, as well as its dependence on bias, an important reduction of the diode current and small rectification values (RR). Additionally, it is shown that the standard extraction methodologies cannot be used to obtain diode parameters of LTP-SBD, as it is necessary to develop adequate parameter extraction methodologies for them.

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