2023
DOI: 10.3390/mi14081491
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Advancements in SiC-Reinforced Metal Matrix Composites for High-Performance Electronic Packaging: A Review of Thermo-Mechanical Properties and Future Trends

Abstract: With the advancement of semiconductor technology, chip cooling has become a major obstacle to enhancing the capabilities of power electronic systems. Traditional electronic packaging materials are no longer able to meet the heat dissipation requirements of high-performance chips. High thermal conductivity (TC), low coefficient of thermal expansion (CTE), good mechanical properties, and a rich foundation in microfabrication techniques are the fundamental requirements for the next generation of electronic packag… Show more

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Cited by 6 publications
(2 citation statements)
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References 107 publications
(127 reference statements)
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“…High TC High CTE leading to increased thermal stresses [236,237] A graph comparing the coefficients of the CTE values of various substrates and semiconductors is shown in Figure 15. In order to have superior levels of heat dissipation, the substrates are also required to have high thermal conductivity values.…”
Section: Metalmentioning
confidence: 99%
“…High TC High CTE leading to increased thermal stresses [236,237] A graph comparing the coefficients of the CTE values of various substrates and semiconductors is shown in Figure 15. In order to have superior levels of heat dissipation, the substrates are also required to have high thermal conductivity values.…”
Section: Metalmentioning
confidence: 99%
“…Understanding the wear and failure mechanisms of the heterogeneous interfaces is of great importance in guiding the design and fabrication of materials and devices. For example, for particle reinforced metal matrix composites (PRMMCs), which are extensively used in aerospace, defense, automotive, braking systems, and electronic packaging, , the interfaces between the soft matrix and the hard particles directly affect their mechanical and tribological properties . The interface degradation is a major factor for the failure of composites, which results in the reduction of the particle’s load-bearing ability, the initiation and propagation of cracks, and the increase of wear. On the other hand, with the continuous scaling down of complementary metal–oxide–semiconductor (CMOS) technology node, the number of chemical mechanical polishing (CMP) steps across heterogeneous interfaces has increased significantly, which challenges the accuracy and efficiency of planarization.…”
mentioning
confidence: 99%