Advanced thin-film silicon-on-sapphire technology: microwave circuit applications

Johnson, Rob; Houssaye, P.R. de la; Chang, Ching‐Wen; Chen, Pin-Fan; Wood, Michael; Garcia, G.A.; Lagnado, I.; Asbeck, P.M.

doi:10.1109/16.669525

Cited by 84 publications

(33 citation statements)

References 18 publications

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“…With this bowtie antenna on silica substrate demonstrated, the electromagnetic field sensors on SOI substrates that we previously reported [27] can be transferred as silicon nanomembranes onto silica substrates [37] or directly fabricated on silicon-on-glass substrates or silicon-on-sapphire substrates [31,30][38] to avoid impacts from backside silicon handles and thus to enhance their detection capability. Recently, a bowtie antenna coupled plasmonic electromagnetic wave sensor is theoretically proposed [39] and then experimentally demonstrated on a SOI substrate [40,41]; however, the silicon substrate introduces high RF loss and weaken its electric field enhancement ability.…”

Section: Discussionmentioning

confidence: 99%

“…More importantly, some electromagnetic wave sensors previously demonstrated on silicon-on-insulator (SOI) substrates [28,27] suffer from unwanted reflection and scattering from backside silicon handle which has intrinsic doping [29], while, in comparison, the silica substrate (without backside silicon handle) can avoid this issue and improve their detection sensitivity. The investigation of the performance of the bowtie antenna on a silica substrate can provide a foundation for the next generation sensitive electromagnetic wave sensors made on silicon-on-glass substrates [30] or silicon-on-sapphire substrates [31] [32].…”

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confidence: 99%

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Integrated Broadband Bowtie Antenna on Transparent Silica Substrate

Zhang

Chung

Wang

et al. 2016

Antennas Wirel. Propag. Lett.

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Abstract-The bowtie antenna is a topic of growing interest in recent years. In this paper, we design, fabricate, and characterize a modified gold bowtie antenna integrated on a transparent silica substrate. The bowtie antenna is designed with broad RF bandwidth to cover the X-band in the electromagnetic spectrum. We numerically investigate the antenna characteristics, specifically its resonant frequency and enhancement factor. Our designed bowtie antenna provides a strong broadband electric field enhancement in its feed gap. Taking advantage of the low-k silica substrate, high enhancement factor can be achieved without the unwanted reflection and scattering from the backside silicon handle which is the issue of using an SOI substrate. We simulate the dependence of resonance frequency on bowtie geometry, and verify the simulation results through experimental investigation, by fabricating different sets of bowtie antennas on silica substrates and then measuring their resonance frequencies. In addition, the farfield radiation pattern of the bowtie antenna is measured, and it shows dipole-like characteristics with large beam width. Such a broadband antenna will be useful for a myriad of applications, ranging from photonic electromagnetic wave sensing to wireless communications.

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Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

Integrated Broadband Bowtie Antenna on Transparent Silica Substrate

Zhang

Chung

Wang

et al. 2016

Antennas Wirel. Propag. Lett.

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“…At higher frequencies, a CMOS/SOS switch recently demonstrated an input-referred third-order intercept point of 18 dBm at 2.4 GHz, with a 1.8 dB insertion loss and 30 dB isolation in the "off" state [53]. In this particular application, switches built in semiconductor IC technologies with insulating substrates (such as GaAs and CMOS/SOS) have some significant advantages compared to bulk CMOS technology.…”

Section: Rf Switchesmentioning

confidence: 99%

Integrated circuit technology options for RFICs-present status and future directions

Larson

1998

IEEE J. Solid-State Circuits

205

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Abstract-This paper will summarize the technology tradeoffs that are involved in the implementation of radio frequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements-including noise figure, linearity, gain, phase noise, and power dissipation. The advantages and disadvantages of each of the competing technologies-Si CMOS and bipolar junction transistors (BJT's), Si/SiGe HBT's and GaAs MESFET's, PHEMTS and HBT's will be examined in light of these requirements.

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“…1,2 In fact, aluminum oxide, AlO x , turned out to be useful for many electronic applications like silicon-onsapphire for CMOS technology, 3 organic devices, 4 THz-nano-rectennas, 5 nTP tunnel diodes, 6 gate metals on III/V-semiconductors 7,8 and for resistive switches. 9 In these applications AlO x films are mostly produced by ALD, 7,10 RIE-plasma-growth 6 or thermal oxidation.…”

Section: Introductionmentioning

confidence: 99%

Kinetic Monte Carlo of transport processes in Al/AlOx/Au-layers: Impact of defects

et al. 2016

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Ultrathin films of alumina were investigated by a compact kMC-model. Experimental jV-curves from Al/AlOx/Au-junctions with plasma- and thermal-grown AlOx were fitted by simulated ones. We found dominant defects at 2.3-2.5 eV below CBM for AlOx with an effective mass mox∗=0.35 m0 and a barrier EB,Al/AlOx≈2.8 eV in agreement with literature. The parameterization is extended to varying defect levels, defect densities, injection barriers, effective masses and the thickness of AlOx. Thus, dominant charge transport processes and implications on the relevance of defects are derived and AlOx parameters are specified which are detrimental for the operation of devices.

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Advanced thin-film silicon-on-sapphire technology: microwave circuit applications

Cited by 84 publications

References 18 publications

Integrated Broadband Bowtie Antenna on Transparent Silica Substrate

Integrated Broadband Bowtie Antenna on Transparent Silica Substrate

Integrated circuit technology options for RFICs-present status and future directions

Kinetic Monte Carlo of transport processes in Al/AlOx/Au-layers: Impact of defects

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