Advanced thermal simulation of SiGe:C HBTs including back-end-of-line

d’Alessandro, V.; Magnani, Alessandro; Codecasa, Lorenzo; Rinaldi, N.; Aufinger, Klaus

doi:10.1016/j.microrel.2016.06.005

Cited by 19 publications

(10 citation statements)

References 37 publications

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“…where R TH,s signifies the thermal resistance of the FEOL semiconductor substrate, and R TH,m is BEOL metal layers thermal resistance generated by the upward heat flow volume and can be expressed as follows

R_{italicTH, s} = \int_{0}^{b} \frac{dz}{k_{s} ((), T) A_{s} ((), x, y, z)},

R_{italicTH, m} = \int_{0}^{‐ t} \frac{‐ italicdz}{k_{m} ((), T) A_{m} ((), x, y, z)},

where b denotes the distance from the heat source to the substrate, and t signifies the distance from the heat source to the top of the metal layer.…”

Section: Methods With Beolmentioning

confidence: 99%

An approach for determining thermal resistance model parameters of SiGe HBT

Wang

Zhang

et al. 2019

Int J Numerical Modelling

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This paper presents an improved method for determining the thermal resistance and junction temperature for silicon germanium heterojunction bipolar transistors. This method is a full analytical procedure without any iteration based on a set of accurate expressions. The thermal resistance is tested against iterative and analytic methods reported before. Good agreement is obtained between simulated and measured results for three SiGe devices with different emitter geometries.KEYWORDS analytic method, back end of line (BEOL), silicon germanium heterojunction bipolar transistors, thermal resistance

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R_{italicTH, s} = \int_{0}^{b} \frac{dz}{k_{s} ((), T) A_{s} ((), x, y, z)},

R_{italicTH, m} = \int_{0}^{‐ t} \frac{‐ italicdz}{k_{m} ((), T) A_{m} ((), x, y, z)},

where b denotes the distance from the heat source to the substrate, and t signifies the distance from the heat source to the top of the metal layer.…”

Section: Methods With Beolmentioning

confidence: 99%

An approach for determining thermal resistance model parameters of SiGe HBT

Wang

Zhang

et al. 2019

Int J Numerical Modelling

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“…Note that we approximate the actual nonuniform heat source with a rectangular uniform heat source. Since the proposed extraction method is independent of the uniformity of the heat source, we adopted this approximation, instead of a more rigorous approach followed in [21]. The heat source injects power at uniform power density, and all other outer surfaces except the heat sinks are assumed to be thermally insulating.…”

Section: B Tcad Generated Datamentioning

confidence: 99%

BEOL Thermal Resistance Extraction in SiGe HBTs

Nidhin

Balanethiram²,

Nair

et al. 2022

IEEE Trans. Electron Devices

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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“…In particular, we will now focus on the set of test structures named VM, for which copper metal dummies, acting as heat spreaders, are present upon the emitter contacts till metal-3 (VM3), metal-6 (VM6) and metal-8 (VM8); in a reference transistor named VM1 the metallization on the emitter contacts stops instead at metal-1 level (refer to Fig.3). It must be pointed out that the Rth value of these transistors is lowered as higher levels are reached for the metallization in the BEOL [22]- [24], since the heat flux can find an alternative path in the copper of the BEOL (the results for the Rth of these HBTs are detailed and reported in [21]).…”

Section: Thermal Penetration Depth Experimental Studymentioning

confidence: 99%

Thermal Penetration Depth Analysis and Impact of the BEOL Metals on the Thermal Impedance of SiGe HBTs

D'Esposito

Balanethiram

Battaglia

et al. 2017

IEEE Electron Device Lett.

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In this letter we present a detailed investigation on how dynamic thermal phenomena take place in state-of-the-art SiGe HBTs when excited by a sinusoidal power dissipation. To give a better insight into the mechanisms leading to the thermal impedance (Zth) decay, we introduce the concept of thermal penetration depth; then, with the help of 3D thermal simulations, we illustrate its effect on the spatial distribution of the temperature variations within the transistor structure, according to the frequency of operation. In order to experimentally analyze the impact on a real device, dedicated HBT structures are designed; they consist of multi-finger SiGe HBTs realized in B55 technology from STMicroelectronics, for which modifications are made in the Back-End-Of-Line (BEOL) metallization or in the transistor layout, increasing its Deep Trench Isolation (DTI) enclosed area. For these transistors, Zth measurements are carried out in the frequency range 10kHz-1GHz; the results show that the metal connections configuration in the BEOL or layout modifications can considerably impact the Zth decay at low frequencies. An identical Zth trend is instead measured above 1-2 MHz, demonstrating that at higher frequencies just the region close to the heat source is concerned by dynamic thermal phenomena.

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Advanced thermal simulation of SiGe:C HBTs including back-end-of-line

Cited by 19 publications

References 37 publications

An approach for determining thermal resistance model parameters of SiGe HBT

An approach for determining thermal resistance model parameters of SiGe HBT

BEOL Thermal Resistance Extraction in SiGe HBTs

Thermal Penetration Depth Analysis and Impact of the BEOL Metals on the Thermal Impedance of SiGe HBTs

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