Advanced Semiconductor Materials and Devices—Outlook

Claeys, Cor; Simoen, Eddy

doi:10.1007/978-3-662-04974-7_9

Cited by 26 publications

(38 citation statements)

References 64 publications

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“…Whereas Polvino et al (2008) reported that the exposure induced permanent structural damage to the crystal structure, Mastropietro et al (2013) have shown that the intense radiation only damages the Si /Si-on-insulator interface but not the crystalline Si structure. Aside from SiC and GaN which potentially offer radiation-hard alternatives to silicon devices (Sellin & Vaitkus, 2006), bulk or layered GaAs is known to be a very radiation-hard material suitable for X-ray detectors (Claeys & Simoen, 2002;Lioliou & Barnett, 2016;Smolyanskiy et al, 2018). Here, we show that GaAs/ (In,Ga)As/GaAs core-shell NWs may also be affected by X-ray-induced radiation damage.…”

Section: Introductionmentioning

confidence: 72%

Beam damage of single semiconductor nanowires during X-ray nanobeam diffraction experiments

Hassan¹,

Lähnemann²,

Davtyan³

et al. 2020

J Synchrotron Radiat

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Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, when performing the experiment under ambient conditions, the required high X-ray dose and prolonged exposure times can lead to radiation damage. To unveil the origin of radiation damage, a comparison is made of nXRD experiments carried out on individual semiconductor nanowires in their as-grown geometry both under ambient conditions and under He atmosphere at the microfocus station of the P08 beamline at the third-generation source PETRA III. Using an incident X-ray beam energy of 9 keV and photon flux of 1010 s−1, the axial lattice parameter and tilt of individual GaAs/In0.2Ga0.8As/GaAs core–shell nanowires were monitored by continuously recording reciprocal-space maps of the 111 Bragg reflection at a fixed spatial position over several hours. In addition, the emission properties of the (In,Ga)As quantum well, the atomic composition of the exposed nanowires and the nanowire morphology were studied by cathodoluminescence spectroscopy, energy-dispersive X-ray spectroscopy and scanning electron microscopy, respectively, both prior to and after nXRD exposure. Nanowires exposed under ambient conditions show severe optical and morphological damage, which was reduced for nanowires exposed under He atmosphere. The observed damage can be largely attributed to an oxidation process from X-ray-induced ozone reactions in air. Due to the lower heat-transfer coefficient compared with GaAs, this oxide shell limits the heat transfer through the nanowire side facets, which is considered as the main channel of heat dissipation for nanowires in the as-grown geometry.

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Section: Introductionmentioning

confidence: 72%

Beam damage of single semiconductor nanowires during X-ray nanobeam diffraction experiments

Hassan¹,

Lähnemann²,

Davtyan³

et al. 2020

J Synchrotron Radiat

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“…The choice of the post-implantation annealing temperature T a = 598 K as the optimum temperature due to the selection of Si-B3-type radiation defects with the highest concentration, which introduce additional energy levels in the semiconductor's band gap, follows from the analysis of the literature [39] and previous studies [40]. In order to confirm this fact, the G = f(T p ) dependencies were developed for individual samples and four different annealing temperatures T a (Figures 3a, 4a and 5a), from which it can be seen that for each of the implantation doses used, local maxima and characteristic inflection of the G = f(T p ) curve occur for temperature T a = 598 K. Figures 3b, 4b and 5b show analogous G = f(T p ) relationships for individual samples, for the previously selected post-implantation annealing temperature T a = 598 K and different frequencies f. In this case, we also observe local conductance maxima whose location shifts towards higher sample temperatures T p with increasing frequency.…”

Section: Resultsmentioning

confidence: 99%

Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells

Węgierek

Pastuszak

2021

Materials

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The aim of the work is to present the possibility of generating intermediate levels in the band gap of p-type silicon doped with boron by using neon ion implantation in the aspect of improving the efficiency of photovoltaic cells made on its basis. The work contains an analysis of the influence of the dose of neon ions on the activation energy value of additional energy levels. The article presents the results of measurements of the capacitance and conductance of silicon samples with a resistivity of ρ = 0.4 Ω cm doped with boron, the structure of which was modified in the implantation process with Ne+ ions with the energy E = 100 keV and three different doses of D = 4.0 × 1013 cm−2, 2.2 × 1014 cm−2 and 4.0 × 1014 cm−2, respectively. Activation energies were determined on the basis of Arrhenius curves ln(et(Tp)/Tp2) = f(1/kTp), where Tp is in the range from 200 K to 373 K and represents the sample temperature during the measurements, which were carried out for the frequencies fp in the range from 1 kHz to 10 MHz. In the tested samples, additional energy levels were identified and their position in the semiconductor band gap was determined by estimating the activation energy value. The conducted analysis showed that by introducing appropriate defects in the silicon crystal lattice as a result of neon ion implantation with a specific dose and energy, it is possible to generate additional energy levels ∆E = 0.46 eV in the semiconductor band gap, the presence of which directly affects the efficiency of photovoltaic cells made on the basis of such a modified material.

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“…Nevertheless, for most defects, such as the Si C -SF center, these cross sections are of the order of the lattice constant (∼10 −15 cm 2 ). 33,34 The lifetimes of the excited and shelving states can significantly vary among different color centers. However, in the steady-state, they determine only the maximum achievable SPEL rate given by R max = τ nr /[τ r (τ s + τ nr )].…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Toward Ultrafast Tuning and Triggering Single-Photon Electroluminescence of Color Centers in Silicon Carbide

Khramtsov

Fedyanin

2019

ACS Appl. Electron. Mater.

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Electrically driven single-photon sources are essential for building compact, scalable and energy-efficient quantum information devices. Recently, color centers in SiC emerged as promising candidates for such nonclassical light sources. However, very little is known about how to control, dynamically tune and switch their single-photon electroluminescence (SPEL), which is required for efficient generation of single photons on demand. Here, we propose and theoretically demonstrate a concept of a gate-tunable single-photon emitting diode, which allows not only to dynamically tune the SPEL rate in the range from 0.6 to 40 Mcps but also to switch it on and off in only 0.2 ns.

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Advanced Semiconductor Materials and Devices—Outlook

Cited by 26 publications

References 64 publications

Beam damage of single semiconductor nanowires during X-ray nanobeam diffraction experiments

Beam damage of single semiconductor nanowires during X-ray nanobeam diffraction experiments

Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells

Toward Ultrafast Tuning and Triggering Single-Photon Electroluminescence of Color Centers in Silicon Carbide

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