Abstract:High-κ metal gate is widely used for 32nm and beyond to enable scaling down of MOSFET geometry while improving device speed and gate leakage. This structure requires a good work function metal to tune Vt as well as a stable metal barrier to control inter-diffusion and interaction between the multiple metal gate layers. To meet the integration requirements of metal gate, it is very important to choose the proper metal thin film process. Its stability and excellent integration performance make TiN a good option … Show more
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