Advanced photodiodes and circuits for OPTO-ASICs

Hohenbild, M.; Ghazi, A.; Seegebrecht, P.; Zimmermann, Horst

doi:10.1109/edmo.2001.974316

Cited by 3 publications

(1 citation statement)

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“…For red light a -3 dB-bandwidth of 259 MHz (tr = 1.1 ns and tf = 1.6 ns) at h = 638.3 nm was determined using the same diode configuration. By using the double-photodiode configuration in conjunction with a different transimpedance amplifier (2 k transimpedance, [2]) rise and fall times slightly below 1 ns were measured for red light (t, = 0.8 ns and tf = 0.9 ns). The time responses of the amplified photocurrents are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

High-speed photodiodes with reduced dark current and enhanced responsivity in the blue/uv spectra

Hohenbild¹,

Seegebrecht²,

Pless³

et al.

The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003.

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A novel photodiode for the blue/uv spectral range, which is compatible to standard bulk CMOS or BiCMOS technology processes, is presented. The new diode structure is compared to an equivalent diode smture, processed with conventional contact fmgegers. Quantum efficiencies of 62 % and 93.3 % were measured for blue (405 nm) and red (638.3 nm) laser light, respectively. A -3 dB bandwidth of over 259 M H z is determined for both wavelengths. The low dark cment density of 1.2 nA/cm' results in a very good noise performance.

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Section: Resultsmentioning

confidence: 99%