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A new monolithically integrated photodiode in CMOS technology using p-type substrate is presented. This photodiode is optimized for a high speed and a wide spectral range from red to blue/UV. The cathode finger structure of the photodiode increases the quantum efficiency for a wavelength of 400 nm to 46 % compared to a value of 14 % for a conventional photodiode without a finger cathode. With an antireflection coating a further increase to a quantum efficiency of 70 % is possible for the finger photodiode. Rise and fall times below 1 ns are measured for this photodiode for red and UV light. The corresponding bandwidths are larger than 470 MHz. Such a fast and highly efficient photodiode is needed in near-future optoelectronic integrated circuits (OEICs) for applications in optical storage systems like DVD (Digital Versatile Disk) and DVR (Digital Video Recording).

A b s t r a c t Results of new CMOS-integrated PIN photodiodes in optoelectronic integrated circuits (OEICs) for applications in optical storage systems, in optical data transmission and in optical interconnects are presented. The rise and fall times of the integrated PIN photodiodes are below 0.3 ns. The CMOS-integrated PIN photodiodes are sufficient for a NRZ data rate of 1.5 Gb/s and the results show that PIN CMOS receiver OEICs in submicron technologies enable data rates up to 1 Gb/s. These photodiodes combine this high speed with a high quantum efficiency of approximately 50 %. The further improvement of their quantum efficiency above 90 % by the integration of an antireflection coating is discussed. Low-offset PIN-CMOS-OEICs for the application in digital-versatile-disk systems with bandwidths in excess of 32 MHz are presented. A highspeed PIN-CMOS-OEIC in 1.0 pm technology for optical data transmission exhibits a data rate of 622Mb/s.

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