Advanced packaging of integrated passive devices for RF applications

Logan, E.A.; Clearfield, H. M.; Young, J.L.; Bolton, D.H.

doi:10.1109/rawcon.1998.709193

Cited by 3 publications

(2 citation statements)

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“…Passive devices such as resistors, de-coupling capacitors, filters and resonators are key building blocks of RF circuitry but are also relatively large devices, consuming 70% or more of available board space in some cases [3]. There is, therefore, a powerful argument for combining IPD with TSV.…”

Section: Introductionmentioning

confidence: 99%

“…Use of silicon interposer provides a highly versatile vehicle for 3D integration and offers the potential to combine CMOS devices from multiple technology nodes with MEMS and photonic devices [1]. TSV is a key enabling technology for 3D-IC integration, providing low impedance contacts between adjacent tiers in the three dimensional stack [2].Passive devices such as resistors, de-coupling capacitors, filters and resonators are key building blocks of RF circuitry but are also relatively large devices, consuming 70% or more of available board space in some cases [3]. There is, therefore, a powerful argument for combining IPD with TSV.…”

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confidence: 99%

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Integration of fine-pitched Through-Silicon Vias and Integrated Passive Devices

Dzafir

Marimuthu

Hsiao

et al. 2011

2011 IEEE 61st Electronic Components and Technology Conference (ECTC)

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This paper reports on a silicon interposer containing both Through-Silicon Vias [TSV] and Integrated Passive Devices [IPD]. The fine-pitched 30µm diameter x 100µm deep TSV connect the IPD on one side of the wafer with Re-Distribution Layer [RDL] metallization and solder bumps on the other. Such a platform provides great versatility for heterogeneous system integration and reduced form-factor packaging. Interposer manufacture is described and performance of integrated RF filters and resonators is assessed after reliability testing, including; high temperature stress, thermal cycling and accelerated stress test. IntroductionThe ongoing demand for ever-increasing functionality within electronic systems drives both CMOS device shrinkage [Moore's Law] and integrated packaging approaches ['More than Moore']. Three dimensional interconnect (3D-IC) integration is an example of the 'More-Than-Moore' approach and offers improved system performance by reducing interconnect length to increase device speeds, and by using stacking to reduce package form factors and enable heterogeneous device integration. Use of silicon interposer provides a highly versatile vehicle for 3D integration and offers the potential to combine CMOS devices from multiple technology nodes with MEMS and photonic devices [1]. TSV is a key enabling technology for 3D-IC integration, providing low impedance contacts between adjacent tiers in the three dimensional stack [2].Passive devices such as resistors, de-coupling capacitors, filters and resonators are key building blocks of RF circuitry but are also relatively large devices, consuming 70% or more of available board space in some cases [3]. There is, therefore, a powerful argument for combining IPD with TSV. Integrating (stacking) the passive components into the silicon interposer reduces overall package footprint and so saves space. Use of TSV reduces the interconnect length between the passive and active components, thereby reducing parasitic impedance effects and so improving system performance.Whilst the advantages of TSV+IPD integration are clear, systems manufactured using this approach must also be reliable, and, to date, little has been published on the reliability of such systems. In this paper, we report on the reliability of a silicon interposer containing IPD and TSV. Parametric test data will be used to characterize interposer performance and will include DC and RF testing of the IPD alone and then of the IPD and TSV. Extracted S-Parameters for filters and resonators, measured before and after a variety of reliability tests demonstrate the robustness of the integrated interposer.

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%