Advanced optical methods for patterning of photonic structures in photoresist, III-V semiconductors and PMMA

Pudiš, Dušan; Suslik, Lubos; Kubicova, Ivana; Škriniarová, J.; Martinček, Ivan

doi:10.1117/12.881702

Cited by 3 publications

(3 citation statements)

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“…, (1) where M x N is image resolution, i,j are numbers of pixels in both directions and Li,j is relative optical output in appropriate pixel coded to 8 bits. The motivation for using this method is to omit the light emitted from the edges of PhC LED.…”

Section: Methodsmentioning

confidence: 99%

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Optical properties of LEDs with patterned 1D photonic crystal

et al. 2015

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In this paper we focus on the application of the one-dimensional photonic crystal (1D PhC) structures on the top of Al 0.295 Ga 0.705 As/GaAs multi-quantum well light emitting diode (MQW LED). 1D PhC structures with periods of 600 nm, 700 nm, 800 nm, and 900 nm were fabricated by the E-Beam Direct Write (EBDW) Lithography. Effect of 1D PhC period on the light extraction enhancement was studied. 1D PhC LED radiation profiles were obtained from Near Surface Light Emission Images (NSLEI). Measurements showed the strongest light extraction enhancement using 800 nm period of PhC. Investigation of PhC LED radiation profiles showed strong light decoupling when light reaches PhC structure. Achieved LEE was from 22.6% for 600 nm PhC LED to 47.0% for 800 nm PhC LED. LED with PhC structure at its surface was simulated by FDTD simulation method under excitation of appropriate launch field.

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Section: Methodsmentioning

confidence: 99%

“…Currently very widely used approach is based on using photonic crystals (PhC) on the top of the LED structure [1,2]. Optical investigation of PhC LED comprises of light-current measurements as well as near-and farfield measurements.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of LEDs with patterned 1D photonic crystal

et al. 2015

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“…For this purpose, currently is very widely used approach based on using photonic crystals (PhC) on the top or buried in the LED structure [1,2]. To quantify improvement of the LED optical properties, there are needed optical characterization methods such as light-current measurements, near- [3] and far-field measurements.…”

Section: Introductionmentioning

confidence: 99%

Far Field Measurements of Phc Led Prepared by E–Beam Lithography

Hronec

Škriniarová

Bencurova

et al. 2014

Journal of Electrical Engineering

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The paper deals with optical characterization of the Al 0.295 Ga 0.705 As/GaAs multi-quantum well light emitting diode (LED) structure with photonic crystal (2D PhC) patterned on the top of the structure using Electron Beam Direct Write Lithography (EBDWL). Light-current characteristics measured by integrating sphere shows increase of extracted light intensity as 21.1 % . Additionally, extracted light intensity was studied by far-field measurements as a complementary method to light-current characteristics. The far-field measurements show increase of extracted light intensity as 31.2 % . We suggest this method as more suitable for evaluation of extracted light intensity because it omits emission from edges of the LED and thus light is measured only from the area where PhC is patterned.

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