Advanced non-linear InP HEMT model parameter estimation from vectorial large-signal measurements

Schreurs, Dominique; Verspecht, Jan; Vandenberghe, Servaas; Zanden, K. van der; Carchon, G.; Nauwelaers, Bart

doi:10.1109/iciprm.1999.773732

Cited by 3 publications

(5 citation statements)

References 6 publications

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“…In-AlAs/ InGaAs interface in InP devices has greater conduction band discontinuity, high electron density of two electrons, high ternary electron concentration in conductive channel, and greatly improves the current processing capability of the device. InP HEMT has a higher operating frequency than GaN HEMT and GaAs HEMT and the models of GaN HEMT and GaAs HEMT can only be used for reference [18,19] . The study of large-signal modeling of InP HEMTs has been proposed in Refs.…”

Section: Introductionmentioning

confidence: 99%

An improved large signal model of InP HEMTs

Li¹,

Li²,

Liu³

2018

J. Semicond.

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An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately.

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Section: Introductionmentioning

confidence: 99%

An improved large signal model of InP HEMTs

Li¹,

Li²,

Liu³

2018

J. Semicond.

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“…Models determined by optimisation procedures often have limited extrapolation capabilities. The choice of a particular empirical expression or the number of hidden nodes and layers is often a compromise between simplicity and accuracy [7]. Therefore, this method is preferably used when a device has to be modelled for a well-defined application.…”

Section: -430mentioning

confidence: 99%

“…The additional degrees of freedom are that not only the amplitude of the two incident signals can be varied, but also their phase difference and respective frequencies. The importance of a good choice of the degrees of freedom on the modelling efficiency has been covered in detail in [14]. Not only the measurement conditions, but also the required modelling accuracy influences the number of necessary measurements.…”

Section: Direct Extraction Of the Mosfet's State Functionsmentioning

confidence: 99%

“…The classical procedure to determine these model parameters is to optimise the functions towards the DC measured state functions, e.g., 1 2 , and/or the S-parameter measurement based state functions, e.g., Cll or the corresponding large-signal Q1. We elaborated recently a novel parameter estimation procedure for HEMTs [7] based on vectorial large-signal measurements only. In this work, we extend and evaluate this method for MOSFETs.…”

Section: Mosfet Model Parameter Estimationmentioning

confidence: 99%

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Evaluation of non-linear modelling techniques for MOSFETs based on vectorial large-signal measurements

Schreurs

Vandenberghe²,

Carchon³

et al.

2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No

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Non-linear MOSFET models are mostly derived indirectly from DC, low-frequency C-V and/or high-frequency S-parameter measurements. We developed non-linear modelling techniques that determine the state functions of MOSFETs directly from high-frequency vectorial large-signal measurements and thus eliminate the small-signal detour. Two methods are proposed to determine these state functions: parameter optimisation and extraction. Both approaches yield accurate results. Hence, the main difference is the application range. The method of parameter optimisation quickly generates accurate non-linear models for particular applications, while the extraction method is preferred to determine general non-linear models.

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“…The need for three independent measurements significantly increases the minimum number of NNMS measurements necessary to generate a model. This minimum number can be optimised by exploiting all the degrees of freedom of the NNMS set-up to reach an excellent coverage of the state-variable plane (Vl,V2) within one largesignal measurement [9]. Not only the available excitations, but also the required accuracy influences the measurement number.…”

Section: Mosfet's State-functions Through Extractionmentioning

confidence: 99%

Applicability of non-linear modelling methods based on vectorial large-signal measurements to MOSFETs

Schreurs

Vandamme²,

Vandenberghe³

et al.

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)

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Non-linear MOSFET models are mostly indirectly derived from DC, C-V and S-parameter measurements. We present two accurate modelling techniques that directly determine the MOSFET state-functions from high-frequency vectorial large-signal measurements. The parameter optimisation method quickly generates models for specific applications, while the extraction method is preferred to obtain general models. INTRODUCTIONThe trend towards the combined integration of analogue and digital functions on one chip stresses the need for efficient and accurate MOSFET modelling. The behaviour of MOSFETs is mostly described in terms of an equivalent scheme. This scheme can be divided in an extrinsic and intrinsic part. The extrinsic part is related to the device layout and consists of linear elements. The intrinsic part consists of three

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Advanced non-linear InP HEMT model parameter estimation from vectorial large-signal measurements

Cited by 3 publications

References 6 publications

An improved large signal model of InP HEMTs

An improved large signal model of InP HEMTs

Evaluation of non-linear modelling techniques for MOSFETs based on vectorial large-signal measurements

Applicability of non-linear modelling methods based on vectorial large-signal measurements to MOSFETs

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