Advanced Low-Temperature–High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs

Chen, Kuan-Hsu; Lin, Chien-Yu; Chen, Min-Chen; Lin, Yu‐Shan; Chang, Ya‐Hui; Lin, Yen-Sheng; Jin, Fu‐Yuan; Ciou, Fong‐Min; Chang, Kai‐Chun; Hung, Wei‐Chun; Kuo, Ting-Tzu; Yeh, Chien‐Hung; Chen, Po-Hsun; Chang, Ting‐Chang

doi:10.1109/ted.2020.3032385

Cited by 15 publications

(3 citation statements)

References 29 publications

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“…The capacitance measurement with changing temperature is performed on Si 0.8 Ge 0.2 MOSCAPs, as shown in figure 1(d). It is known from the experiment that the C-V hump becomes more significant as the temperature increases, which means that the deep defects of the Si 0.8 Ge 0.2 /SiO 2 interface cannot be ignored [23]. The C-V relationship of silicon MOSCAP with temperature is similar to that of SiGe MOSCAP, as shown in the inset of figure 1(d).…”

Section: Resultsmentioning

confidence: 80%

Investigation of degradation behavior under negative bias temperature stress in Si/Si_0.8Ge_0.2 metal-oxide-semiconductor capacitors

Chang¹,

Lin²,

Chang³

et al. 2021

J. Phys. D: Appl. Phys.

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In this paper, capacitance and conductance characteristics are used to explain reliability issues in metal-oxide-semiconductor capacitors (MOSCAPs) with a silicon-germanium (SiGe) channel. The SiGe channel devices are also comprehensively compared to traditional Si channel devices. After negative bias temperature stress, both exhibit flat-band voltage (V FB) shifts in the negative direction and a rise in the conductance hump. Generally, the process of Si devices is more stable than SiGe devices, resulting in the interface quality of Si MOSCAPs being better due to lattice constant matching at the interface. However, it is noteworthy that the degradation of Si MOSCAPs is more serious than that of Side MOSCAPs. Therefore, this study quantitatively extracts the interface defects and illustrates the generation of interface defects with a reaction-diffusion model. In addition, the difference in the injected energy level is used to explain the difference in the VFB shift.

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Section: Resultsmentioning

confidence: 80%

Investigation of degradation behavior under negative bias temperature stress in Si/Si_0.8Ge_0.2 metal-oxide-semiconductor capacitors

Chang¹,

Lin²,

Chang³

et al. 2021

J. Phys. D: Appl. Phys.

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“…TiN, TaN and TiAl were used as a gate electrode and back contact. Finally, traditional forming gas annealing was operated in ambient 95% N 2 and 5% H 2 for 10 min at 400 • C [26,27]. The two Si 0.8 Ge 0.2 MOSCAP devices have the same dimensions, with a width (W) of 20 µm and a length (L) of 20 µm.…”

Section: Methodsmentioning

confidence: 99%

Abnormal hump in low temperature in SiGe devices with silicon capping insertion layer

Huang¹,

Chen²,

Lin³

et al. 2021

J. Phys. D: Appl. Phys.

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This study compares the capacitance-voltage (C-V) characteristics in silicon-germanium (SiGe) metal-oxide-semiconductor capacitances with and without a silicon oxide capping layer. The SiGe channel with the silicon oxide capping layer exhibits an improved C-V property at room temperature but has an abnormal shift and depression at low temperature (77 K). We determined that the threshold voltage shift was induced by the Fermi-level when ambient temperature was changed. The additional silicon capping layer was responsible for introducing defects resulting in depression and hump in the C-V measurements. Such a phenomenon is mainly caused by the different distribution of defects, which was established by modifying the alternating current pulse amplitude during the C-V measurement.

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“…The interface defects were eliminated after the treatment. Thus, in such treatment, the SCF can effectively penetrate into the material to enhance the performance of amorphous solar cell [29][30][31][32]. This treatment not only reduces the thermal budget in device fabrication but also improves the performance of the device.…”

Section: Introductionmentioning

confidence: 99%

Advanced supercritical fluid technique to reduce amorphous silicon defects in heterojunction solar cells

Chou¹,

Lin²,

Chang³

et al. 2022

Semicond. Sci. Technol.

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The advanced supercritical fluid (SCF) technique was applied to reduce defects in the amorphous silicon thin-film layer and enhance the efficiency of a heterojunction solar cell from 18.1% to 19.6%. An amorphous silicon thin-film layer has been used as a passivation layer between the substrate and electrode contact in heterojunction solar cells; however, many dangling bonds exist in the amorphous silicon thin-film layer. Therefore, the SCF technique was developed to passivate defects. The advantage of a supercritical state is high penetrability and low temperature. Thus, this SCF treatment can passivate defects in the completed device without changing the original fabrication process. After treatment, the passivation of dangling bonds was examined using Fourier-transform infrared spectroscopy, which confirmed the improved Si–H bonding. Moreover, electrical properties such as open-circuit voltage, short-circuit density, efficiency, shunt resistance, and leakage current were measured to confirm the enhancement. A simulated light source of 1 kW·M−2 global AM1.5 spectrum was used to analyze the increase in cell efficiency, and the dark current was analyzed to confirm the leakage current improvement. Finally, a model for explaining the phenomenon in cells after treatment was developed.

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Advanced Low-Temperature–High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs

Cited by 15 publications

References 29 publications

Investigation of degradation behavior under negative bias temperature stress in Si/Si_0.8Ge_0.2 metal-oxide-semiconductor capacitors

Investigation of degradation behavior under negative bias temperature stress in Si/Si_0.8Ge_0.2 metal-oxide-semiconductor capacitors

Abnormal hump in low temperature in SiGe devices with silicon capping insertion layer

Advanced supercritical fluid technique to reduce amorphous silicon defects in heterojunction solar cells

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Advanced Low-Temperature–High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs

Cited by 15 publications

References 29 publications

Investigation of degradation behavior under negative bias temperature stress in Si/Si0.8Ge0.2 metal-oxide-semiconductor capacitors

Investigation of degradation behavior under negative bias temperature stress in Si/Si0.8Ge0.2 metal-oxide-semiconductor capacitors

Abnormal hump in low temperature in SiGe devices with silicon capping insertion layer

Advanced supercritical fluid technique to reduce amorphous silicon defects in heterojunction solar cells

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Product

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Investigation of degradation behavior under negative bias temperature stress in Si/Si_0.8Ge_0.2 metal-oxide-semiconductor capacitors

Investigation of degradation behavior under negative bias temperature stress in Si/Si_0.8Ge_0.2 metal-oxide-semiconductor capacitors