Advanced Heterogeneous Integration of InP HBT and CMOS Si Technologies

Gutierrez-Aitken, A.; Chang‐Chien, P.; Scott, D.; Hennig, Kelly; Kaneshiro, E.; Nam, P.; Cohen, N.; Ching, D.; Thai, Kerri; Oyama, B.; Zhou, Joe; Geiger, Craig; Poust, B.; Parlee, Matthew; Sandhu, R.; Phan, Wen; Oki, A.K.; Kagiwada, R.S.

doi:10.1109/csics.2010.5619667

Cited by 21 publications

(8 citation statements)

References 8 publications

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“…The interaction of the probe with the surrounding structures is clearly visible. The impact of this coupling and excitation of parasitic modes on the calibration procedure can be evaluated, when simulating different calibration standards in microstrip technology [4] and CPW environment [1], [2], [5], [6], respectively. As an example, Fig.…”

Section: Pitfalls In On-wafer Calibration At Mm-wave Frequenciesmentioning

confidence: 99%

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On-wafer small-signal and large-signal measurements up to sub-THz frequencies

Krozer

Doerner

Schmuckle

et al. 2014

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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Recent advances in MMIC technology have opened the possibilities for circuit operation in the THz range. There are numerous examples of BiCMOS and III-V compound device technologies with demonstrated performance beyond 600 GHz. Characterization of such MMIC are predominantly performed on-wafer in a planar environment. However, on-wafer characterization facilities do not fully keep pace with MMIC development in terms of frequency and power.The paper discusses issues involved in on-wafer calibration at mm-wave frequencies, which is the basis for accurate measurements and characterization of active and passive device. Subsequently, the paper discusses mm-wave interconnect characterization. Lowloss interconnects are important for mm-wave MMIC, especially in case of heterogeneous integration. Finally, a novel heterogeneous integration approach of bipolar technologies, using both BiCMOS and InP DHBT processes is presented. This approach heavily relies on low-loss interconnects and accurate device modelling. It will be shown that accurate large-signal models can be efficiently extracted from well-calibrated on-wafer multi-bias small-signal measurements, but verification is difficult due to calibration difficulties at mm-wave frequencies.

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Section: Pitfalls In On-wafer Calibration At Mm-wave Frequenciesmentioning

confidence: 99%

“…COSMOS [5], [6], or SciFab [7]- [10]. The major driving force is to provide high-speed III-V semiconductor devices on Si platforms, providing not only speed improvement without trade-off in signal amplitude, but also functional complexity to high-speed circuits.…”

Section: Heterogeneous Mmic Device Testingmentioning

confidence: 99%

On-wafer small-signal and large-signal measurements up to sub-THz frequencies

Krozer

Doerner

Schmuckle

et al. 2014

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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“…The heterogeneous integration of III-V devices and complementary metal oxide semiconductor (CMOS) processes has been explored in the area of power electronics in recent years [19][20][21]. For instance, the Defense Advanced Research Projects Agency (DARPA) Diverse Accessible Heterogeneous Integration (DAHI) program has demonstrated InP chips integrated on CMOS chips through flip-chip bonding [22][23][24]. The direct integration of III-V devices on top of CMOS wafers has been shown to achieve better function complexities [25] as well as a reduction in board space required over conventional monolithic designs [26,27].…”

Section: Introductionmentioning

confidence: 99%

Heterogeneous Integration of GaN and BCD Technologies

et al. 2019

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Light-emitting diodes (LEDs) are solid-state devices that are highly energy efficient, fast switching, have a small form factor, and can emit a specific wavelength of light. The ability to precisely control the wavelength of light emitted with the fabrication process enables LEDs to not only provide illumination, but also find applications in biology and life science research. To enable the new generation of LED devices, methods to improve the energy efficiency for possible battery operation and integration level for miniaturized lighting devices should be explored. This paper presents the first case of the heterogeneous integration of gallium nitride (GaN) power devices, both GaN LED and GaN transistor, with bipolar CMOS DMOS (BCD) circuits that can achieve this. To validate this concept, an LED driver was designed, implemented and verified experimentally. It features an output electrical power of 1.36 W and compact size of 2.4 × 4.4 mm2. The designed fully integrated LED lighting device emits visible light at a wavelength of approximately 454 nm and can therefore be adopted for biology research and life science applications.

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“…In recent years, several approaches to integrating InP transistors with CMOS have been pursued, ranging from InP/silicon heteroepitaxy () to adhesive and oxide () wafer‐ and die‐bond integration. In this paper, we present advances in the heterogeneous integration processing which resulted in the realization of a robust and reproducible InP DHBT/SiGe BiCMOS‐heterointegrated technology, enabling first‐pass design of complex integrated RF mm‐wave and sub‐mm‐wave front ends.…”

Section: Introductionmentioning

confidence: 99%

SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications

Weimann

Stoppel

Schukfeh

et al. 2016

Phys. Status Solidi A

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We present a wafer-level heterointegrated indium phosphide double heterobipolar transistor on silicon germanium bipolarcomplementary metal oxide semiconductor (InP DHBT on SiGe BiCMOS) process which relies on adhesive wafer bonding. Subcircuits are co-designed in both technologies, SiGe BiCMOS and InP DHBT, with more than 300 GHz bandwidth microstrip interconnects. The 250 nm SiGe HBTs offer cutoff frequencies around 200 GHz, the 800 nm InP DHBTs exceed 350 GHz. Heterointegrated signal sources are demonstrated including a 328 GHz quadrupling source with −12 dBm RF output power. A common design kit for full InP DHBT/SiGe BiCMOS co-design was set up. The technology is being opened to third-party customers through IHP's multi-purpose wafer foundry interface. Microphotograph of InP DHBT / SiGe BiCMOS wafer

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Advanced Heterogeneous Integration of InP HBT and CMOS Si Technologies

Cited by 21 publications

References 8 publications

On-wafer small-signal and large-signal measurements up to sub-THz frequencies

On-wafer small-signal and large-signal measurements up to sub-THz frequencies

Heterogeneous Integration of GaN and BCD Technologies

SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications

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