SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications

Weimann, Nils; Stoppel, D.; Schukfeh, M. I.; Hossain, Maruf; Al-Sawaf, Thualfiqar; Janke, B.; Doerner, Ralf; Sinha, Siddharta; Schmuckle, F.J.; Krüger, Olaf; Krozer, Viktor; Heinrich, W.; Lisker, Marco; Krüger, Andreas; Datsuk, Anton; Meliani, C.; Tillack, Bernd

doi:10.1002/pssa.201532549

Cited by 37 publications

(21 citation statements)

References 22 publications

(24 reference statements)

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“…1), verifiable in a focused ion beam cross section shown in [8]. Furthermore, the transferred substrate process flow is amenable to post-CMOS monolithic heterogeneous integration [8], enabling system-on-chip integration of terahertz functionality.…”

Section: Introductionmentioning

confidence: 91%

“…This process enables the replacement of extrinsic semiconductor material ( r ∼ 12) by low-k benzocyclobutene (BCB) with r = 2.65 in the extrinsic collector region (Fig. 1), verifiable in a focused ion beam cross section shown in [8]. Furthermore, the transferred substrate process flow is amenable to post-CMOS monolithic heterogeneous integration [8], enabling system-on-chip integration of terahertz functionality.…”

Section: Introductionmentioning

confidence: 96%

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Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With <inline-formula> <tex-math notation="LaTeX">${f}_{\text{max}}$ </tex-math> </inline-formula> ~ 0.53 THz

Weimann

Johansen

Stoppel

et al. 2018

IEEE Trans. Electron Devices

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We report on the realization of transferredsubstrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-µm-wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies. Index Terms-Gallium arsenide antimonide, heterojunction bipolar transistors, indium phosphide, millimeterwave (mm-wave) integrated circuits, submillimeter-wave (sub-mm-wave) integrated circuits.

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Section: Introductionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 96%

Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With <inline-formula> <tex-math notation="LaTeX">${f}_{\text{max}}$ </tex-math> </inline-formula> ~ 0.53 THz

Weimann

Johansen

Stoppel

et al. 2018

IEEE Trans. Electron Devices

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“…The main reason for the high performance of InP-based technologies is the combination of the wide gap of InP (1.34 eV) with the high electron drift velocity (more than 2 × 10 7 cm/s) [62]. The key performance parameters of HEMTs include the gate length, the gate-source capacitance and the transconductance (which have a direct correspondence to HBT parameters in Equations (1) and (3)), as well as the FET-related parameter of the saturation velocity [2,59].…”

Section: Emerging Transistor Technologies Capable Of Operating In mentioning

confidence: 99%

“…The biggest drawback of any III-V technology, including InP, has always been the limited variety of circuits that can be fabricated [62]. Pure HBT technologies, such as InP DHBT, would typically just be used to fabricate millimeter-wave or THz circuits, while the remaining circuits (e.g., digital circuits and the analog front end) would be fabricated in CMOS.…”

Section: Emerging Transistor Technologies Capable Of Operating In mentioning

confidence: 99%

“…In recent years, it was proposed that InP HBT technology could be integrated with SiGe BiCMOS technology (described in the following section), and such hybrid technology would be able to offer the benefits of both technologies. One of the possible methods is that presented by Weimann et al [62], where processing is done in two fabrication facilities (fabs): a III-V fab and an SiGe fab. First, the BiCMOS wafer is fabricated in the SiGe fab.…”

Section: Emerging Transistor Technologies Capable Of Operating In mentioning

confidence: 99%

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Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Božanić

Sinha

2019

Sensors

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This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research. Commercial terahertz radar sensors of today are being built using bulky and expensive technologies such as Schottky diode detectors and lasers, as well as using some emerging detection methods. Meanwhile, a considerable amount of research effort has recently been invested in process development and modeling of transistor technologies capable of amplifying in the terahertz band. Indium phosphide (InP) transistors have been able to reach maximum oscillation frequency (fmax) values of over 1 THz for around a decade already, while silicon-germanium bipolar complementary metal-oxide semiconductor (BiCMOS) compatible heterojunction bipolar transistors have only recently crossed the fmax = 0.7 THz mark. While it seems that the InP technology could be the ultimate terahertz technology, according to the fmax and related metrics, the BiCMOS technology has the added advantage of lower cost and supporting a wider set of integrated component types. BiCMOS can thus be seen as an enabling factor for re-engineering of complete terahertz radar systems, for the first time fabricated as miniaturized monolithic integrated circuits. Rapid commercial deployment of monolithic terahertz radar chips, furthermore, depends on the accuracy of transistor modeling at these frequencies. Considerations such as fabrication and modeling of passives and antennas, as well as packaging of complete systems, are closely related to the two main contributions of this paper and are also reviewed here. Finally, this paper probes active terahertz circuits that have already been reported and that have the potential to be deployed in a re-engineered terahertz radar sensor system and attempts to predict future directions in re-engineering of monolithic radar sensors.

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Integrated Substrates: Millimeter-Wave Transistor Technologies

Božanić

Sinha

2019

Smart Sensors, Measurement and Instrumentation

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SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications

Cited by 37 publications

References 22 publications

Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With <inline-formula> <tex-math notation="LaTeX">${f}_{\text{max}}$ </tex-math> </inline-formula> ~ 0.53 THz

Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With <inline-formula> <tex-math notation="LaTeX">${f}_{\text{max}}$ </tex-math> </inline-formula> ~ 0.53 THz

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Integrated Substrates: Millimeter-Wave Transistor Technologies

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