Advanced failure analysis of photon emission on FEOL failing of 45nm technology node

Abstract

Global failure analysis techniques are very critical in the failure site isolation, especially continuous scaling down IC device. Active photon probing is most dominant technique of the global failure analysis technique. In this paper, two real case of the 45nm technology node was studied. Both of the unit failed in the FEOL. Thermally-induced Voltage Alteration (TIVA) and Light-induce Voltage Alteration (LIVA) were performed on the failed device. Detailed analysis on the difference and nature of TIVA and LIVA were studied in this real case. TEM and EDX result also confirm the electrical FA result.