Advanced electrothermal Spice modelling of large power IGBTs

Azar, R.; Udrea, F.; Ng, Wai Tung; Dawson, F.P.; Findlay, W.; Waind, P.; Amaratunga, G.A.J.

doi:10.1049/ip-cds:20040448

Cited by 15 publications

(8 citation statements)

References 3 publications

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“…Table 1 shows the equivalent electricalthermal circuit elements. It can be surmised that the popularity of this method is due to the familiarity of circuit analysis to electrical designers, the ability to use available circuit simulation tools (e.g., SPICE simulators) to easily solve transient or steady state thermal systems, and the ability to solve coupled domain electrical-thermal models of electronic devices with that same simulation tool [9].…”

Section: B Thermal Circuit Modeling Of Electronic Packagesmentioning

confidence: 99%

Modeling transient thermal response of pulsed power electronic packages

Jankowski

McCluskey

2009

2009 IEEE Pulsed Power Conference

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Steady-state power conversion applications have benefited from numerous packaging and cooling improvements, and there has been a push to apply the same techniques to pulsed power electronic systems and devices. However, the unique aspects of pulsed systems create a trade-off between high package thermal capacity for mitigating rapid temperature rise and low thermal resistance for rapid heat rejection. This report details a numerical study of several electronics packages with varying levels of cooling integration. Using Finite Element equivalent thermal circuit models to perform transient simulations of the packages, the effect of convective improvement and a reduced thermal path upon junction temperature response was examined. Results showed that while a reduced thermal stack and high convection rate speeds the return to steady state after a pulse, the ability for improved convection to mitigate junction temperature rise diminishes significantly as pulse widths approach the thermal time constant of the package. In addition, the reduced thermal capacity of the integrated packages causes them to exhibit higher junction temperature rise and larger temperature swings than basic, non-integrated packages for certain pulse conditions. The worst case examined showed a direct die-cooling package exhibit a 3x increase in peak temperature and a 5x increase in pulse-to-pulse temperature swing over a standard, non-integrated package.

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Section: B Thermal Circuit Modeling Of Electronic Packagesmentioning

confidence: 99%

Modeling transient thermal response of pulsed power electronic packages

Jankowski

McCluskey

2009

2009 IEEE Pulsed Power Conference

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“…They are used in such power converters as inverters [3][4][5] or DC-DC converters [6][7][8]. During operation of the considered transistors, their internal temperature increases as a result of self-heating phenomena [9][10][11][12][13]. An increase in this temperature causes shortening of the device life-time [13][14][15][16] and changes in the course of their characteristics [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

“…In the literature, a lot of IGBTs models of different accuracy can be found. Such models belong to one of the following groups: detailed models [38,39] or compact models [12,17,18,31]. Detailed models make it possible to obtain higher accuracy of computations of space-time distribution of, e.g., current density in the considered device can be computed with these models.…”

Section: Introductionmentioning

confidence: 99%

Accurate Circuit-Level Modelling of IGBTs with Thermal Phenomena Taken into Account

Górecki

Zarębski

2021

Energies

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This paper proposes a new compact electrothermal model of the Insulated Gate Bipolar Transistors (IGBT) dedicated for SPICE (Simulation Program with Integrated Circuit Emphasis). This model makes it possible to compute the non-isothermal DC characteristics of the considered transistor and the waveforms of terminal voltages and currents of the investigated device and its internal temperature at transients. This model takes into account the nonlinearity of thermal phenomena in this device. The form of the formulated model is described and the problem of estimating its parameter values is discussed. The correctness of the proposed model was verified experimentally both at DC operation and at transients. The obtained results are compared to the results of computations performed with the use of the classical literature model. A very good agreement between the results of measurements and computations performed with the new model is obtained at different cooling conditions and in a wide range of changes of parameters characterising the electrical excitation of the tested device.

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“…There has been significant effort to model thermal effects on the electronic behavior of components (electro-thermal behavior) [5], [6], etc. The main goals for these models are to achieve high precision, accurate temperature characterization, and simulation efficiency.…”

Section: Introductionmentioning

confidence: 99%

“…The main goals for these models are to achieve high precision, accurate temperature characterization, and simulation efficiency. Most of the methods used to model the electro-thermal behavior of a component feature a thermal representation of the device in the electrical model [6]. This representation consists of multiple RC (resistance-capacitance) thermal networks, where power losses in the components are represented as sources of heat, and ambient temperature is set as the "zero reference."…”

Section: Introductionmentioning

confidence: 99%

Steady State Electro-Thermal Modeling For DC-DC Converters

Ciprian

Lehman

2006

2006 IEEE Workshops on Computers in Power Electronics

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This paper presents a method to combine CFD simulation with electrical simulation packages. This approach leads to highly accurate electro-thermal system modeling for DC-DC converters. Based on an initial power loss of main components and a thermal model of the converter, a user friendly CFD thermal simulation is used to obtain an initial point for case steady-state temperatures. These set of temperatures are then fed into temperature-dependent electrical models and simulations. The procedure can be repeated while error levels remain within an acceptable range. This approach can lead to a relatively accurate electro-thermal model at steady state.

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Advanced electrothermal Spice modelling of large power IGBTs

Cited by 15 publications

References 3 publications

Modeling transient thermal response of pulsed power electronic packages

Modeling transient thermal response of pulsed power electronic packages

Accurate Circuit-Level Modelling of IGBTs with Thermal Phenomena Taken into Account

Steady State Electro-Thermal Modeling For DC-DC Converters

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