Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference, 2005.
DOI: 10.1109/pvsc.2005.1488341
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Advanced dry processes for crystalline silicon solar cells

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Cited by 15 publications
(13 citation statements)
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“…However, it was not possible to reach the same passivation quality as of thermal oxides when applied to a solar cell due to detrimental shunting of the inversion layer induced by the SiN x -layer [24]. Also, thermal stability seems to be an issue although recent works have shown that a medium passivation level can be maintained after a firing step [38].…”
Section: Thermal Stabilitymentioning
confidence: 99%
“…However, it was not possible to reach the same passivation quality as of thermal oxides when applied to a solar cell due to detrimental shunting of the inversion layer induced by the SiN x -layer [24]. Also, thermal stability seems to be an issue although recent works have shown that a medium passivation level can be maintained after a firing step [38].…”
Section: Thermal Stabilitymentioning
confidence: 99%
“…The sketch given in Figure 1 shows a device with a passivated front surface, but a fully metallized rear. High-efficiency diffused-junction solar cells for mass production increasingly feature a dielectric passivation layer at the rear as well, through which the base contact is "spiked" as well [22,23].…”
Section: Introductionmentioning
confidence: 99%
“…Although this firing step is in principle beneficial for the passivation of the bulk material, the stability of an excellent rear passivation after this hightemperature process still needs to be demonstrated. A successful example of a well-passivating silicon nitride layer was given by Agostinelli et al [3].…”
Section: Introductionmentioning
confidence: 99%