Advanced deflection concept for large area, high resolution e-beam lithography

Pfeiffer, H. C.; Langner, G. O.

doi:10.1116/1.571168

Cited by 36 publications

(4 citation statements)

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“…Electron beam (e-beam) lithography can be used to fabricate desired high-resolution nanostructures that are not easily prepared using other fabrication methods [ 46 , 47 ]. The high degree of freedom available for e-beam lithography has enabled studies of the basic principles underlying electric field enhancements by well-designed metallic nanostructures [ 48 , 49 ].…”

Section: Top-down Nanolithographymentioning

confidence: 99%

Nanostructured plasmonic substrates for use as SERS sensors

et al. 2016

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Plasmonic nanostructures strongly localize electric fields on their surfaces via the collective oscillations of conducting electrons under stimulation by incident light at a certain wavelength. Molecules adsorbed onto the surfaces of plasmonic structures experience a strongly enhanced electric field due to the localized surface plasmon resonance (LSPR), which amplifies the Raman scattering signal obtained from these adsorbed molecules. This phenomenon is referred to as surface-enhanced Raman scattering (SERS). Because Raman spectra serve as molecular fingerprints, SERS has been intensively studied for its ability to facilely detect molecules and provide a chemical analysis of a solution. Further enhancements in the Raman intensity and therefore higher sensitivity in SERS-based molecular analysis have been achieved by designing plasmonic nanostructures with a controlled size, shape, composition, and arrangement. This review paper focuses on the current state of the art in the fabrication of SERS-active substrates and their use as chemical and biosensors. Starting with a brief description of the basic principles underlying LSPR and SERS, we discuss three distinct nanofabrication methods, including the bottom-up assembly of nanoparticles, top-down nanolithography, and lithography-free random nanoarray formation. Finally, typical applications of SERS-based sensors are discussed, along with their perspectives and challenges.

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Section: Top-down Nanolithographymentioning

confidence: 99%

Nanostructured plasmonic substrates for use as SERS sensors

et al. 2016

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“…The moving objective lens, or MOL [1], or the almost identical concept of the variable axis lens, or VAL [2], employ in-lens deflectors which not only deflect the electron beam, but also effectively displace the optical center of the magnetic lens field in order to reduce the deflection aberrations. The displacement of the effective lens field still does not render a large enough effective field, but the principle it demonstrates is very interesting.…”

Section: Stage Parametersmentioning

confidence: 99%

Design of an electron projection system with slider lenses and multiple beams

Moonen

Leunissen²,

Jager

et al. 2002

Emerging Lithographic Technologies VI

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The commercial applicability of electron beam projection lithography systems may be limited at high resolution because of low throughput. The main limitations to the throughput are:• Beam current. The Coulomb interaction between electrons result in an image blur. Therefore less beam current can be allowed at higher resolution, impacting the illumination time of the wafer. • Exposure field size. Early attempts to improve throughput with "full chip" electron beam projection systems failed, because the systems suffered from large off-axis aberrations of the electron optics, which severely restricted the useful field size. This has impact on the overhead time.A new type of projection optics will be proposed in this paper to overcome both limits. A slider lens is proposed that allows an effective field that is much larger than schemes proposed by SCALPEL and PREVAIL. The full width of the die can be exposed without mechanical scanning by sliding the beam through the slit-like bore of the lens. Locally, at the beam position, a "round"-lens field is created with a combination of a rectangular magnetic field and quadrupoles that are positioned inside the lens. A die can now be exposed during a single mechanical scan as in state-of-the-art light optical tools.The total beam current can be improved without impact on the Coulomb interaction blur by combining several beams in a single lithography system if these beams do not interfere with each other. Several optical layouts have been proposed that combine up to 5 beams in a projection system consisting of a doublet of slider lenses. This type of projection optics has a potential throughput of 50 WPH (300 mm) at 45 nm with a resist sensitivity of 6 µC/cm 2 .

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“…[2][3][4] The method to accomplish MOL, VAL and SOL conditions for the electron optics system whose lens and deflectors have different field types is still under development. This is because the conditions of the deflection fields to achieve MOL, VAL and SOL were derived from the magnetic lens's field distribution expressed in the power series.…”

Section: General Condition For Electrostatic Deflection Swing Objmentioning

confidence: 99%

Low energy large scan field electron beam column for wafer inspection

Liu

Zhang

Zhao

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inPerformances by the electron optical system of low energy electron beam proximity projection lithography tool with a large scanning field Electron and ion optical design software for integrated circuit manufacturing equipment A swing objective retarding immersion lens (SORIL) column for wafer inspection is designed and constructed based on SOIL concept. The column consists of a compound retarding electrostatic and magnetic immersion lens and five electrostatic deflectors. The retarding electrostatic and magnetic immersion lens has small spherical and chromatic aberration coefficients for low landing energy. All electrostatic deflectors have a cylindrical duodecapole structure. One deflector is accommodated between the polepiece of the magnetic lens and the specimen surface, and operated at high voltage to fulfill SOIL condition. An on-axis annular semiconductor detector with a small opening in the center is employed to collect signal electrons. The annular detector achieves high collection efficiency over a large scan field. Experimental results show that the SORIL column has accomplished a 600 m ϫ 600 m scan field with 0.1 m maximum spot size in a wide landing energy range (from 200 to 2000 eV) without dynamic aberration correction or dynamic focusing. Resolution of 15 nm is achieved in a 50 m ϫ 50 m scan field. The probe beam current delivered by the SORIL column is from a few nA to more than 100 nA because of the specially designed bright electron gun. The SORIL column has been installed onto HMI's electron beam wafer inspection tool, eScan™ 300. The SORIL's optical performances enable eScan™ 300 to be a powerful electron beam wafer inspection and in-line process monitoring tool.

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Advanced deflection concept for large area, high resolution e-beam lithography

Cited by 36 publications

References 0 publications

Nanostructured plasmonic substrates for use as SERS sensors

Nanostructured plasmonic substrates for use as SERS sensors

Design of an electron projection system with slider lenses and multiple beams

Low energy large scan field electron beam column for wafer inspection

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