Advanced CD-SEM metrology to improve total process control performance for hyper-NA lithography

Osaki, Mayuka; Tanaka, Maki; Shishido, Chie; Ishimoto, Toru; Hasegawa, Norio; Sekiguchi, Kohei; Watanabe, Kenji; Cheng, Stone; Laidler, David; Ercken, Monique; Altamirano, E.

doi:10.1117/12.771886

Cited by 4 publications

(2 citation statements)

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“…In each shot, twenty five images were taken and measured for the PTR. Some of the authors have previously reported experimental results that show that the greater the PTR, the lower the line height in focus-exposure map shots 10 . Higher PTR due to a large pixel-brightness variation in the patterntop area indicates the heavier up-and-down roughness that creates bright-and-dark variation in SEM image.…”

Section: Cd-sem Advanced Measurements: Hybrid Calibration For In-die mentioning

confidence: 98%

Hybrid metrology solution for 1X node technology

et al. 2012

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The accelerated pace of the semiconductor industry in recent years is putting a strain on existing dimensional metrology equipments (such as CDSEM, AFM, Scatterometry) to keep up with ever-increasing metrology challenges. However, a revolution appears to be forming with the recent advent of Hybrid Metrology (HM) -a practice of combining measurements from multiple equipment types in order to enable or improve measurement performance. In this paper we extend our previous work on HM to measure advanced 1X node layers -EUV and Negative Tone Develop (NTD) resist as well as 3D etch structures such as FinFETs. We study the issue of data quality and matching between toolsets involved in hybridization, and propose a unique optimization methodology to overcome these effects. We demonstrate measurement improvement for these advanced structures using HM by verifying the data with reference tools (AFM, XSEM, TEM). We also study enhanced OCD models for litho structures by modeling Line-edge roughness (LER) and validate its impact on profile accuracy. Finally, we investigate hybrid calibration of CDSEM to measure in-die resist line height by Pattern Top Roughness (PTR) methodology.

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Section: Cd-sem Advanced Measurements: Hybrid Calibration For In-die mentioning

confidence: 98%

Hybrid metrology solution for 1X node technology

et al. 2012

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“…Of course the resist height can be measured by other procedure. For example, we have developed pattern top roughness index (PTR) for the resist-loss measurement by using CD-SEM [6] [7] . The PTR is one of the possibilities to achieve height correction in line pattern shape metrology with MBL.…”

Section: Resist-height Correctionmentioning

confidence: 99%

Verification and extension of the MBL technique for photo resist pattern shape measurement

et al. 2011

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In order to achieve pattern shape measurement with CD-SEM, the Model Based Library (MBL) technique is in the process of development. In this study, several libraries which consisted by double trapezoid model placed in optimum layout, were used to measure the various layout patterns. In order to verify the accuracy of the MBL photoresist pattern shape measurement, CDAFM measurements were carried out as a reference metrology. Both results were compared to each other, and we confirmed that there is a linear correlation between them. After that, to expand the application field of the MBL technique, it was applied to end-of-line (EOL) shape measurement to show the capability. Finally, we confirmed the possibility that the MBL could be applied to more local area shape measurement like hot-spot analysis.

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