Advanced CD Control Technology for 65-nm Node Dual Damascene Process

Abstract

This paper describes an advanced CD control technology for 65-nm node dual damascene process and beyond Our newly developed DESE (Deposition Enhanced Shrink Etching) technology realizes not only dynamic via shrink ranged 40nm but also accurate trench CD control by feed-forward technology. This technology has been performed for 65-nm Cu/Low-k interconnects using porous CVD SiOC.