“…[4][5][6] In particular, the high performance in NIR and SWIR spectral regions enables PDs more in-depth and extensive applications in special fields, for example, biological health, national defense and security, autonomous driving, machine vision, imaging and optical communication. [7][8][9] Typically, photoactive materials adopted in commercially available infrared PDs are inorganic nonmetallic materials, such as silicon (Si), germanium (Ge) and indium gallium arsenide (InGaAs), which require extremely stringent high temperature and high vacuum environments for crystal growth, and thus leading to high energy consumption. [10][11][12][13] Alternatively, low-temperature and solution-processed metal halide perovskites have experienced their extensive and comprehensive development in PDs [14][15][16] with spectral response regions from UV to terahertz since the last decade, [17][18][19][20][21] due to their exceptional optoelectronic properties of high absorption coefficients (≈10 5 cm −1 ), tunable bandgaps (1.17-2.88 eV), excellent defect tolerance and low mid-gap defect densities, high carrier…”