Advanced atomic force microscopies and their applications in two-dimensional materials: a review

Abstract

Scanning probe microscopy (SPM) allows the spatial imaging, measurement, and manipulation of nano and atomic scale surfaces in real space. In the last two decades, numerous advanced and functional SPM methods, particularly atomic force microscopy (AFM), have been developed and applied in various research fields, from mapping sample morphology to measuring physical properties. Herein, we review the recent progress in functional AFM methods and their applications in studies of two-dimensional (2D) materials, particularly their interfacial physical properties on the substrates. This review can inspire more exciting application works using advanced AFM modes in the 2D and functional materials fields.

A tetracyclic-bislactone-based copolymer donor for efficient semitransparent organic photovoltaics

“…To understand the robust charge transport capability of the PBDTTPTP:N3 layer, we studied the film morphology at different D/A ratios (1 : 1.4, 1 : 2.0 and 1 : 2.6) by employing an atomic force microscope (AFM). 67 All films show similar morphology with a nanofibrillar texture (Fig. S21, ESI†), suggesting that the donor–acceptor phase segregation is less affected by the D/A ratio in PBDTTPTP:N3 cells.…”

Fused-ring electron acceptors with a macrocyclic side chain

“…59,60 The blend film morphology was investigated by atomic force microscopy (AFM). 61 The height and phase images are shown in Fig. 5.…”

Ultraviolet‐Visible‐Short‐Wavelength Infrared Broadband and Fast‐Response Photodetectors Enabled by Individual Monocrystalline Perovskite Nanoplate

“…[ 4–6 ] In particular, the high performance in NIR and SWIR spectral regions enables PDs more in‐depth and extensive applications in special fields, for example, biological health, national defense and security, autonomous driving, machine vision, imaging and optical communication. [ 7–9 ] Typically, photoactive materials adopted in commercially available infrared PDs are inorganic nonmetallic materials, such as silicon (Si), germanium (Ge) and indium gallium arsenide (InGaAs), which require extremely stringent high temperature and high vacuum environments for crystal growth, and thus leading to high energy consumption. [ 10–13 ]…”

“…[4][5][6] In particular, the high performance in NIR and SWIR spectral regions enables PDs more in-depth and extensive applications in special fields, for example, biological health, national defense and security, autonomous driving, machine vision, imaging and optical communication. [7][8][9] Typically, photoactive materials adopted in commercially available infrared PDs are inorganic nonmetallic materials, such as silicon (Si), germanium (Ge) and indium gallium arsenide (InGaAs), which require extremely stringent high temperature and high vacuum environments for crystal growth, and thus leading to high energy consumption. [10][11][12][13] Alternatively, low-temperature and solution-processed metal halide perovskites have experienced their extensive and comprehensive development in PDs [14][15][16] with spectral response regions from UV to terahertz since the last decade, [17][18][19][20][21] due to their exceptional optoelectronic properties of high absorption coefficients (≈10 5 cm −1 ), tunable bandgaps (1.17-2.88 eV), excellent defect tolerance and low mid-gap defect densities, high carrier…”