Advanced 60 μm thin 600 V punch-through IGBT concept for extremely low forward voltage and low turn-off loss

A novel double-gate Trench Insulated Gate Bipolar transistor with ultra-low on-state voltage

“…Fig. 8 compares V CE -V BD performance of different state-of-the-art technologies [7,15]. To have a fair comparison, all the forward voltages are read under the same current density, J CE = 150 A/cm 2 .…”

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

“…The lower the rated voltage is, the thinner the wafer thickness is. The TWP approach started with 1200 V class devices from the process easiness point of view and currently has reached around 600 V [12][13][14][15][16] and 400 V classes [17]. Considering movements to larger diameter wafers for power devices, it is obvious that TWP is one of the key technologies.…”

IGBT Applications

“…Some examples are 600-V IGBT structures by the Fuji Electric Company [23] and Toshiba Corporation [24]; 1200-V IGBT structures by Fairchild Semiconductor [25]; and 6500-V IGBTs by the ABB Semiconductors Limited [26]. Some examples are 600-V IGBT structures by the Fuji Electric Company [23] and Toshiba Corporation [24]; 1200-V IGBT structures by Fairchild Semiconductor [25]; and 6500-V IGBTs by the ABB Semiconductors Limited [26].…”