Abstract:An analytical technique to clarifying the adsorption behavior of a fluorocarbon gas, which is one of the key steps in reactive ion etching, has been established. In this paper, we focus on the adsorption behavior of fluorocarbon gases to the silicon wafer surface to clarify the etching mechanism in order to realize etching to a high aspect ratio. Each fluorocarbon gas had surface selectivity for SiO2, Si and the photoresist. Each fluorocarbon gas reacted differently at the silicon wafer surface. As a result, t… Show more
“…However, the dependence of the thermal decomposition of MO gases on various metal surfaces has not been investigated. We have reported previously the decomposition characteristics of SiH 4 , B 2 H 6 , PH 3 (1-3), fluorocarbon gases (12), and MO gases (7), which were obtained using FT-IR methods. In this paper, the effect of various metal surfaces on the thermal decomposition of MO gases and a method to prevent the decomposition of MO gases are presented.…”
The performance of semiconductor films is influenced by the purity of the metal-organic (MO) gas that is used, so it is important to investigate the decomposition behavior of MO gases. The decomposition of dimethylzinc, trimethylgallium and trimethylaluminum is found to depend on the metal surface in the reactor tube. A reactor tube with an Al 2 O 3 surface exhibits the highest temperature as which decomposition of the MO gases started, and the highest activation energy. These results indicate that the Al 2 O 3 surface has the lowest catalytic activity for the decomposition of these MO gases. However, decomposition of dimethylzinc occurs at room temperature when it is trapped in a reactor tube. This decomposition ceases past a certain trapped time, so the catalytic activity for the decomposition of MO gases by surfaces stabilizes. Therefore, Al 2 O 3 surfaces are useful for application in MO gas distribution systems.
“…However, the dependence of the thermal decomposition of MO gases on various metal surfaces has not been investigated. We have reported previously the decomposition characteristics of SiH 4 , B 2 H 6 , PH 3 (1-3), fluorocarbon gases (12), and MO gases (7), which were obtained using FT-IR methods. In this paper, the effect of various metal surfaces on the thermal decomposition of MO gases and a method to prevent the decomposition of MO gases are presented.…”
The performance of semiconductor films is influenced by the purity of the metal-organic (MO) gas that is used, so it is important to investigate the decomposition behavior of MO gases. The decomposition of dimethylzinc, trimethylgallium and trimethylaluminum is found to depend on the metal surface in the reactor tube. A reactor tube with an Al 2 O 3 surface exhibits the highest temperature as which decomposition of the MO gases started, and the highest activation energy. These results indicate that the Al 2 O 3 surface has the lowest catalytic activity for the decomposition of these MO gases. However, decomposition of dimethylzinc occurs at room temperature when it is trapped in a reactor tube. This decomposition ceases past a certain trapped time, so the catalytic activity for the decomposition of MO gases by surfaces stabilizes. Therefore, Al 2 O 3 surfaces are useful for application in MO gas distribution systems.
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