Adopting the BSIM3 Model to Describe the DC-IV Characteristics of a Vertical Power MOSFET

Yan, Lixi; Kallfass, Ingmar

doi:10.1109/peac.2018.8590317

Cited by 5 publications

(3 citation statements)

References 8 publications

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“…In our previous work, an extended BSIM3v3 model is successfully adopted to describe the forward DC-IV characteristics of the vertical power MOSFET. 6…”

Section: Model Descriptionmentioning

confidence: 99%

“…Consequently, the P‐ base layer, the N‐ drift layer, and the N+ substrate form a PiN diode between the drain and source electrodes, as shown in Figure 6, which acts as an intrinsic body diode. In our previous work, an extended BSIM3v3 model is successfully adopted to describe the forward DC‐IV characteristics of the vertical power MOSFET 6 …”

Section: Model Descriptionmentioning

confidence: 99%

“…The extended model is implemented using VerilogA and simulated in the Keysight Advanced Design System (ADS). According to the result in our previous work, 6 the parameters for the channel are extracted based on the measurement of the forward output characteristics. Figure 7 shows the parameter extraction result.…”

Section: Parameter Extractionmentioning

confidence: 99%

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Characterization and modeling of the reverse behavior of a vertical power MOSFET

Yan

Kallfass

2019

Micro & Optical Tech Letters

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In this work, the static and dynamic reverse behavior of a vertical structure Si power MOSFET is characterized. The BSIM3 model is adopted and extended to describe the channel current considering asymmetric channel behavior caused by the vertical structure. The diffusion capacitance of the body diode is analyzed, which is critical for the reverse recovery behavior but currently not precisely defined in power MOSFET models. To accurately depict the reverse recovery current, two diode models with diffusion capacitance definitions based on the solution of different methods are built into the MOSFET model and their performance is compared. The result shows that to describe the reverse recovery of the body diode for smaller current range simulation, the stored charge model is recommended, but when scalability is necessary, the carrier distribution model is more suitable.

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“…In our previous work, an extended BSIM3v3 model is successfully adopted to describe the forward DC-IV characteristics of the vertical power MOSFET. 6…”

Section: Model Descriptionmentioning

confidence: 99%

Section: Model Descriptionmentioning

confidence: 99%

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Characterization and modeling of the reverse behavior of a vertical power MOSFET

Yan

Kallfass

2019

Micro & Optical Tech Letters

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A Compact Model Adopting the EKV Model for a Silicon Vertical Power MOSFET

Yan

Dong

Kallfass

2021

2021 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Design and Analysis of a Practical RMS Power Detector Using Power MOSFET

Ravanne

Then

et al. 2021

2021 IEEE 12th Annual Information Technology, Electronics and Mobile Communication Conference (IEMCON)

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Power detector chip design and fabrication have experienced significant advancement with the emergence of various technological processes such as BiCMOS and CMOS.With the continuous downscaling of semiconductor devices, chip fabrication has become more complex and less accessible. This paper investigates the design and analysis of RMS power detectors using power MOSFET. A BSIM3 model developed from extracted parameters of the power MOSFET datasheet was employed to design and simulate the RMS power detector. A cascode structure with a current-source load was used to realize high conversion gain and sensitivity. RMS detection is realized by exploiting the square-law principles of MOS transistors in the strong inversion region. The proposed RMS detector targets practical applications in the agricultural sector and educational institutions. The RMS power detector was fabricated using FR4 PCB substrate. The measurement results at 2 GHz suggest that the RMS power detector employed using power MOSFET on FR4 PCB substrate can detect RF power.

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Adopting the BSIM3 Model to Describe the DC-IV Characteristics of a Vertical Power MOSFET

Cited by 5 publications

References 8 publications

Characterization and modeling of the reverse behavior of a vertical power MOSFET

Characterization and modeling of the reverse behavior of a vertical power MOSFET

A Compact Model Adopting the EKV Model for a Silicon Vertical Power MOSFET

Design and Analysis of a Practical RMS Power Detector Using Power MOSFET

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