Characterization and modeling of the reverse behavior of a vertical power MOSFET

Abstract

In this work, the static and dynamic reverse behavior of a vertical structure Si power MOSFET is characterized. The BSIM3 model is adopted and extended to describe the channel current considering asymmetric channel behavior caused by the vertical structure. The diffusion capacitance of the body diode is analyzed, which is critical for the reverse recovery behavior but currently not precisely defined in power MOSFET models. To accurately depict the reverse recovery current, two diode models with diffusion capacitance definitions based on the solution of different methods are built into the MOSFET model and their performance is compared. The result shows that to describe the reverse recovery of the body diode for smaller current range simulation, the stored charge model is recommended, but when scalability is necessary, the carrier distribution model is more suitable.

Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant

“…1 presents the static and dynamic behavior of the C3M0016120K Spice model in reverse conduction. Unlike what is found in 3 rd quadrant characterization literature [6], [7], the simulation model does not produce any variation of the static curve for the gate-to-source voltage varying below the threshold voltage (i.e. 2.6 V for this model).…”