Admittance spectroscopy in CZTSSe: Metastability behavior and voltage dependent defect study

Hetero-junction kesterite Cu 2 ZnSn(S,Se) 4 solar cells with low bandgap obtained from three different methods of fabrication were exposed to red light illumination, and the changes observed in their electronic properties due to this exposure were studied via open circuit voltage transients, admittance spectroscopy, capacitance voltage profiling techniques, and SCAPS simulation fits to experimental data. The results from the aforementioned techniques, in combination with temperature-dependent current voltage analysis, can be used to reveal the dominant Shockley-Read-Hall recombination path at open circuit voltage. We also derived analytical expressions for the activation energy of the saturation current density and the diode quality factor for the specific case of a solar cell device that has no type inversion at the absorber/buffer interface and is limited by interface recombination in the open circuit condition. It is found that the dominant recombination pathway for the low bandgap Cu 2 ZnSn(S,Se) 4 solar cells under consideration is located in the space charge region and not at the absorber/buffer interface.

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Dominant recombination path in low-bandgap kesterite CZTSe(S) solar cells from red light induced metastability

Lyam

Hölscher

Maiberg

et al. 2021

Journal of Applied Physics

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Admittance spectroscopy in CZTSSe: Metastability behavior and voltage dependent defect study

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Dominant recombination path in low-bandgap kesterite CZTSe(S) solar cells from red light induced metastability

Dominant recombination path in low-bandgap kesterite CZTSe(S) solar cells from red light induced metastability

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