Additive Processes for Semiconductors and Dielectric Materials

Zorman, Christian A.; Roberts, Robert C.; Chen, Li

doi:10.1007/978-0-387-47318-5_2

Cited by 8 publications

(6 citation statements)

References 226 publications

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“…Passivation layers, usually made of SiO 2 and Si 3 N 4 , are often realized by thermal oxidation, plasma enhanced chemical vapor deposition (PECVD) or low-pressure chemical vapor deposition (LPCVD) [53]. However, the passivation layer frequently suffers from process-induced stress, whose state may vary with the layer material and fabrication process.…”

Section: Inducements To Thermal-performance Instabilitymentioning

confidence: 99%

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Liu

Wang

Zhao

et al. 2016

Sensors

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The field of piezoresistive sensors has been undergoing a significant revolution in terms of design methodology, material technology and micromachining process. However, the temperature dependence of sensor characteristics remains a hurdle to cross. This review focuses on the issues in thermal-performance instability of piezoresistive sensors. Based on the operation fundamental, inducements to the instability are investigated in detail and correspondingly available ameliorative methods are presented. Pros and cons of each improvement approach are also summarized. Though several schemes have been proposed and put into reality with favorable achievements, the schemes featuring simple implementation and excellent compatibility with existing techniques are still emergently demanded to construct a piezoresistive sensor with excellent comprehensive performance.

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Section: Inducements To Thermal-performance Instabilitymentioning

confidence: 99%

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Liu

Wang

Zhao

et al. 2016

Sensors

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“…SiC is unique among this group in that it can readily be deposited directly onto Si substrates as single crystalline, polycrystalline and amorphous thin films using conventional chemical vapor deposition (CVD) techniques adapted from those initially developed for silicon (Si). Numerous CVD-based processes have been documented and an extensive review of MEMS-centric deposition processes has recently been published [1].…”

Section: Deposition Of Sic Thin Filmsmentioning

confidence: 99%

Diaphragm-based microsystems using thin film silicon carbide

2012

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Silicon carbide (SiC) is a leading material for both semiconductor devices and harsh environment micro-and nanoelectromechanical systems (MEMS/NEMS) due to a combination of exceptional electrical, mechanical and chemical properties. SiC is also an excellent structural material for micromechanical transducers because of its high Young's modulus and mechanical strength. Suspended thin film diaphragms have been used in a wide range of applications, ranging from fundamental materials characterization to structural elements in high temperature pressure transducers. This paper reviews some of our efforts to develop SiC as a structural material for diaphragm-based MEMS, highlighting recent advances by our group in developing these structures for use in electromechanical microsensors and microactuators.

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“…The most frequently used insulating materials are silicon oxide SiO2, silicon nitride Si3N4 and silicon carbide SiC derivatives. More recent materials such as diamond and diamond-like carbon (DLC) have also attracted wide attention [9]. Two types of techniques are commonly employed to deposit these films, based either on chemical vapour deposition (CVD) or on physical vapour deposition (PVD).…”

Section: Inorganic Dielectric Materialsmentioning

confidence: 99%

“…Typical CVD techniques require high deposition temperature (> 700°C) [9,11,[16][17][18][19][20][21][22][23]. By conventional plasma-enhanced chemical vapour deposition (PECVD) [9,10,14,[24][25][26][27][28][29][30][31][32][33], this temperature could be decrease down to 250-400°C but not below 200°C without important impact on film quality. Pulsed laser deposition [50] and catalytic CVD [51][52] are low temperature alternative processes (150°C).…”

Section: Inorganic Dielectric Materialsmentioning

confidence: 99%

Final capping passivation layers for long-life microsensors in real fluids

Vanhove¹,

Tsopela²,

Bouscayrol³

et al. 2013

Sensors and Actuators B: Chemical

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Final capping insulation layer is a critical step in the microfabrication process that determines the lifetime of analytical microsensors in real fluids. Actual processes encounter considerable limitations as (i) organic passivation layers do not provide a satisfying long-term protection against liquids and (ii) inorganic passivation processes (dielectric materials deposition and patterning) are very aggressive for the underlying layers, imposing severe constraints on the integration of sensitive materials. We present here a low temperature deposition process of high quality silicon nitride Si3N4 using ICP-CVD technique combined with a lift-off based process to pattern conformal deposition, in order to avoid harsh treatments such as wet or dry etching.High-density SiNx films with low H content (5 x 10 20 at/cm 3 ) were synthesized at 100°C with controlled uniformity (5%), refractive index (2.025 at 830 nm), etch rate in buffered hydrofluoric acid (8 nm/min), residual stress (-500 MPa), breakdown field (3.9 MV/cm) and dielectric constant (6.0). In order to validate the compatibility of this passivation process with long-term fluids analysis, microelectrodes were fabricated and their lifetime in natural seawater was evaluated. Their active surfaces were defined by patterning the insulation layer. Special care was given to their accurate estimation through the modelling of chronoamperometric curves.Reproducible and stable electrochemical response was obtained for months (> 50 days), demonstrating a considerably extended lifetime in harsh liquid media.

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Additive Processes for Semiconductors and Dielectric Materials

Cited by 8 publications

References 226 publications

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Diaphragm-based microsystems using thin film silicon carbide

Final capping passivation layers for long-life microsensors in real fluids

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