2015
DOI: 10.3762/bjnano.6.127
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Addition of Zn during the phosphine-based synthesis of indium phospide quantum dots: doping and surface passivation

Abstract: SummaryZinc-doped InP(Zn) colloidal quantum dots (QDs) with narrow size distribution and low defect concentration were grown for the first time via a novel phosphine synthetic route and over a wide range of Zn doping. We report the influence of Zn on the optical properties of the obtained quantum dots. We propose a mechanism for the introduction of Zn in the QDs and show that the incorporation of Zn atoms into the InP lattice leads to the formation of Zn acceptor levels and a luminescence tail in the red regio… Show more

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Cited by 13 publications
(8 citation statements)
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“…The higher growth rate at high temperatures contradicts previous reports that zinc additives passivate the surface of particles counteracting the growth of QDs or ripening. 33,51 Moreover, the slow nucleation and growth into uniform size in the case of In(Zn)P QDs demand systematic and molecular investigation of the growth.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
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“…The higher growth rate at high temperatures contradicts previous reports that zinc additives passivate the surface of particles counteracting the growth of QDs or ripening. 33,51 Moreover, the slow nucleation and growth into uniform size in the case of In(Zn)P QDs demand systematic and molecular investigation of the growth.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…With increasing zinc to indium precursor ratio, the PL peak shifts to higher energy in both cases (Figure 4A), which is attributed to the surface passivation and etching effects of zinc carboxylate that counteract the growth of QDs. 33,51 The fwhm of QDs from the In−P complex remains large with an increasing ratio of zinc to indium precursors up to 350 meV, whereas the fwhm of QDs from the Zn−P complex gradually decreases to 240 meV (Figure 4B). This indicates that the amount of zinc carboxylate does not compensate for the high reactivity of the In−P complex that results in polydisperse QDs.…”
Section: T H Imentioning
confidence: 99%
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“…InP/ZnS and InPZnS/ZnS core/shell and alloy/shell quantum dots (QDs) have been recently proposed as a viable, cadmium-free alternative to cadmium-containing QDs, such as CdS/ZnS, CdSe/ZnS, and CdTe/CdSe/ZnS QDs. Historically, a major challenge for InP QD synthesis lies in the need to replace highly reactive, pyrophoric phosphorus precursors such as tris­(trimethylsilyl)­phosphine [P­(TMS) 3 ] with safer and more stable precursors. In addition to posing significant safety concerns, the use of highly reactive molecular precursors leads to heterogeneous crystal growth, broad InP QD size distribution, and broad emission peaks .…”
Section: Introductionmentioning
confidence: 99%
“…Although the addition of Zn to the synthesis of InP nanocrystals has become common practice in the last years, , very little has been reported on the actual role of the Zn. The few reports on this topic have focused on the effect on the optical properties, but structural aspects were not investigated. ,, Here, instead we carry out a detailed investigation on the location of Zn 2+ in the InP QD lattice. Such compositional tunability is then exploited to match the lattice parameter of the In x Zn y P cores to that of a range of shell materials (GaP, ZnSe and ZnS) which otherwise would not be compatible with InP.…”
mentioning
confidence: 99%