Late planting of wheat in rice-wheat cropping system is perhaps one of the major factors responsible for low crop yield. The main cause of reduction in yield is due to supra-optimal conditions during the reproductive growth. High temperature during reproductive phase induces changes in water relations, decreases photosynthetic rate, and transpiration rate, stomatal conductance and antioxidative defence system. Silicon (Si), being a beneficial nutrient not only provides significant benefits to plants growth and development but may also mitigate the adversities of high temperature. A field study was conducted at Agronomic Research Area of University of Agriculture; Faisalabad, Pakistan to assess the performance of late sown wheat with the soil applied Si. Experiment was comprised of three sowing dates; 10 th Nov (normal), 10 th Dec (late), 10 th Jan (very late) with two wheat varieties (Sehar-2006 and Faisalabad-2008), and an optimized dose of Si (100 mg per kg soil), applied at different growth stages (control, crown root, booting and heading). Results indicated that 100 mg Si per kg soil at heading stage offset the negative impact of high temperature and induced heat tolerance in late sown wheat. Silicon application improved 34% relative water contents (RWC), 30% water potential, 26% osmotic potential, 23% turgor potential and 21% photosynthetic rate, and 32% transpiration rate and 20% stomatal conductance in wheat flag leaf than control treatment. Further it was observed that Si application preventing the oxidative membrane damage due to enhanced activity of antioxidant enzymes, i.e. 35% superoxide dismutase (SOD) and 38% catalase (CAT). In conclusion results of this field study demonstrated that soil applied Si (100 mg per kg soil) at heading stage enhanced all physiological attributes of wheat flag leaf. Which in turn ameliorated the adverse effects of high temperature in late sown wheat. Study depicted that Si can be used as a potential nutrient in order to mitigate the losses induced by high temperature stress.