2006
DOI: 10.1109/jssc.2006.880621
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Adaptive Algorithm Using Hot-Electron Injection for Programming Analog Computational Memory Elements Within 0.2% of Accuracy Over 3.5 Decades

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Cited by 47 publications
(47 citation statements)
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“…Floating gates are programmed using hot-electron injection process or Fowler-Nordheim tunneling [21]. Hot electron injection adds charges to the floating gate and effectively reduces the threshold of the device.…”
Section: A Programming Of the Devicementioning
confidence: 99%
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“…Floating gates are programmed using hot-electron injection process or Fowler-Nordheim tunneling [21]. Hot electron injection adds charges to the floating gate and effectively reduces the threshold of the device.…”
Section: A Programming Of the Devicementioning
confidence: 99%
“…To inject precisely the model and empirical formula developed in [21] were used. The device is operated in subthreshold region and is injected for a finite amount of time ( =10 ms) with drain to source voltage being 5 volts to obtain the set of curves shown in figure 7.…”
Section: A Programming Of the Devicementioning
confidence: 99%
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“…The amount of charge injected during each pulse depends on both the sourceto-drain voltage and the duration of the pulse. For accurate injection we adopt the algorithm described in [8], however, using a pulse-width instead of a drain voltage modulation.…”
Section: B Weight Storage Mechanismmentioning
confidence: 99%
“…We can program the differential charge on M 21 and M 22 to vary the center of the bell-shaped transfer curve, and program the common-mode charge to tune the width. The technique to precisely program the charges in a floating-gate transistor array was described in [3]. Because the template information is stored in a pair of floating-gate transistors as in [4,5], this circuit has the potential to implement adaptive learning algorithms with not only an adaptive mean but also an adaptive variance.…”
Section: The Programmable Bump Circuitmentioning
confidence: 99%