Actively Aligned Flip-Chip Integration of InP to SiN Utilizing Optical Backscatter Reflectometry

Theurer, Michael; Moehrle, Martin G.; Sigmund, A.; Velthaus, K.‐O.; Oldenbeuving, Ruud M.; Wevers, Lennart; Postma, F.M.; Mateman, Richard; Schreuder, F.; Geskus, Dimitri; Wörhoff, Kerstin; Dekker, R.; Heideman, René; Schell, Martin

doi:10.1049/cp.2019.0913

Cited by 4 publications

(8 citation statements)

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“…To demonstrate the feasibility of the flip-chip interface InP DFB lasers have been integrated on a TriPleX™ chip. Using our new approach we achieved a chip-to-chip coupling loss of -1.6 dB only and an optical power coupled to the silicon nitride waveguide exceeding 60mW [16]. This result is comparable to conventional active alignment and enables hybrid integration on a wafer-scale between InP and TriPleX™.…”

Section: Flip-chip Integrationmentioning

confidence: 78%

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Hybrid integrated silicon nitride lasers

Epping

Leinse

Oldenbeuving

et al. 2020

Physics and Simulation of Optoelectronic Devices XXVIII

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Ultra-narrow linewidth tunable hybrid integrated lasers are built from a combination of indium phosphide (InP) and silicon nitride-based TriPleX™. By combining the active functionality of InP with the ultra-low loss properties of the TriPleX™ platform narrow linewidth lasers in the C-band are realized. The InP platform is used for light generation and the TriPleX™ platform is used to define a long cavity with a wavelength-selective tunable filter. The TriPleX™ platform has the ability to adapt mode profiles over the chip and is extremely suitable for mode matching to the other platforms for hybrid integration. The tunable filter is based on a Vernier of micro-ring resonators to allow for single-mode operation, tunable by thermo-optic or stress-induced tuning. This work will show the operational principle and benefits of the hybrid lasers and the state of the art developments in the realization of these lasers. High optical powers (>100 mW) are combined with narrow linewidth (< 1 kHz) spectral responses with tunability over a large (>100 nm) wavelength range and a low relative intensity (<-160 dB/Hz).

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Section: Flip-chip Integrationmentioning

confidence: 78%

“…As shown in Figure 6 Additionally, the integration interface is suitable for active alignment as shown in [9,16]. The InP and TriPleX™ chips both comprise spot-size converters for mode matching and increased alignment tolerance.…”

Section: Flip-chip Integrationmentioning

confidence: 99%

Hybrid integrated silicon nitride lasers

Epping

Leinse

Oldenbeuving

et al. 2020

Physics and Simulation of Optoelectronic Devices XXVIII

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“…The blue line shows the theoretical excess loss based on Gaussian approximation [18] with Gaussian mode field diameters (MFD) of 3.6 μm and 3 μm for the DFB laser and 4.2 μm and 4.4 μm for the TriPleX chip in vertical and horizontal direction, respectively. The MFD were derived from far field measurements as shown in [16]. The theoretical curve fits very well to the measurement and the optimum position can be clearly determined.…”

Section: A Alignment Processmentioning

confidence: 93%

“…In our previous work, we presented our on chip flip-chip integration interface for coupling InP chips to SiN TriPleX and investigated different alignment processes [15], [16]. A novel alignment process utilizing optical backscatter reflectometry (OBR) proved as most successful.…”

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confidence: 99%

Flip-Chip Integration of InP to SiN Photonic Integrated Circuits

Theurer

Moehrle

Sigmund

et al. 2020

J. Lightwave Technol.

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We present our hybrid InP to SiN TriPleX integration interface with a novel alignment technique and its application to complex photonic integrated circuits. The integration interface comprises vertical alignment stops, which simplify the alignment process and allow for array integration with the same simplicity as for single dies. Horizontal alignment is carried out by utilizing optical backscatter reflectometry to get an active feedback signal without the need to operate the chip. Thus, typical contacting limitations of active flip-chip alignment are overcome. By using this method, we demonstrate the integration of InP DFB lasers with more than 60 mW of optical power coupled to a SiN waveguide with an averaged coupling loss of -2.1 dB. The hybrid integration process is demonstrated for single dies as well as full arrays. We evaluate the feasibility of the assembly process for complex photonic integrated circuits by integrating an InP gain chip to a SiN TriPleX external cavity. The process proves to be well suited and allows monitoring chip quality during assembly. A fully functional hybrid integrated tunable laser is fabricated, which is capable of full C-band tuning with optical output power of up to 60 mW.

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“…This is often mitigated using a mode-matching waveguide between the III/V and the SiN waveguides made by a material with an intermediate refractive index waveguide, such as silicon or polymer. Examples of integration of III/V devices on a SiN platform are reported in the literature for both flip-chip bonding [183][184][185] and transfer printing [186][187][188] with an insertion loss as low as 2.1 dB.…”

Section: Pick-and-place Of Light Sources Onto Soimentioning

confidence: 99%

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

Littlejohns

Rowe

et al. 2020

Applied Sciences

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The field of silicon photonics has experienced widespread adoption in the datacoms industry over the past decade, with a plethora of other applications emerging more recently such as light detection and ranging (LIDAR), sensing, quantum photonics, programmable photonics and artificial intelligence. As a result of this, many commercial complementary metal oxide semiconductor (CMOS) foundries have developed open access silicon photonics process lines, enabling the mass production of silicon photonics systems. On the other side of the spectrum, several research labs, typically within universities, have opened up their facilities for small scale prototyping, commonly exploiting e-beam lithography for wafer patterning. Within this ecosystem, there remains a challenge for early stage researchers to progress their novel and innovate designs from the research lab to the commercial foundries because of the lack of compatibility of the processing technologies (e-beam lithography is not an industry tool). The CORNERSTONE rapid-prototyping capability bridges this gap between research and industry by providing a rapid prototyping fabrication line based on deep-UV lithography to enable seamless scaling up of production volumes, whilst also retaining the ability for device level innovation, crucial for researchers, by offering flexibility in its process flows. This review article presents a summary of the current CORNERSTONE capabilities and an outlook for the future.

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Actively Aligned Flip-Chip Integration of InP to SiN Utilizing Optical Backscatter Reflectometry

Cited by 4 publications

References 0 publications

Hybrid integrated silicon nitride lasers

Hybrid integrated silicon nitride lasers

Flip-Chip Integration of InP to SiN Photonic Integrated Circuits

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

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