Active Pixel Sensor Using a 1×16 Nano-Wire Photodetector Array for Complementary Metal Oxide Semiconductor Imagers

Abstract

AbslraeL @er the years, lidar probing has k e n widely used to identify doud properties (e.g. thickness and ancentration) in an atmosphere. In the current paper, we mamine the inverse problem of reconstructing the doud mncentralion from lidar signal. The problem that is considered is a hyperbolic system of fint-order partial differential equations in a semi-infinite medium. The issues of existence, uniqueness and mnlinuous dependence on initial data of the inverse problem are addressed.

High-Gain Multiple-Gate Photodetector With Nanowires in the Channel

“…In the proposed geometry, the NWs are integrated in the channel that is electrostatically controlled by a set of two gates. This boosts the photocurrent and leads to photoresponsivities of greater than 10 4 A/W, which is 100 × larger than the best reported responsivity in an NW-based phototransistor [9].…”

“…NWs have also been used in building optical switches and photodetectors [5]- [7]. Moreover, there is an interest in incorporating silicon NW-based phototransistors in image sensors, due to their fabrication compatibility with CMOS technology [8], [9].…”

“…Furthermore, there is a solution to compensate the poor absorption of NWs by incorporating the wires into gain-producing devices like avalanche photodiodes [12], photoconductors [7], and phototransistors [9], [13]. These devices [7], [9], [13] are fabricated on silicon-on-insulator (SOI) wafers, as the thin silicon layer facilitates creation of NWs. The device is normally planar: A phototransistor, for example, is similar to metal-oxide-semiconductor (MOS) structures.…”

Junction-less phototransistor with nanowire channels, a modeling study

“…The small size of nanowires limits their ability to absorb light efficiently [3].Therefore, individual nanowires are preferred to be incorporated in photodetector geometries with optical gain, such as phototransistors. The transistor can be a conventional junction bipolar or a Metal Oxide Semiconductor (MOS) type [4,5], or even a junction-less geometry [6].…”

FIB-SEM as a tool for characterizing single-photon detectors

“…The better spot size achievable by this way is not below 1μm, what limits the possibilities of studying modern imagers made on pixels with sizes in the nm range [6]. In this work, a new method for fully characterizing an APD array made in CMOS technology is proposed, using nm-sized spots.…”