Abstract:This paper presents a survey of active microwave semiconductor 'devlices with emphasis on devices made from Gallium Arsenide which is presently the material with the greatest scope and promise. Thanks to the three properties of high mobility, low threshold field and the existencp of semi-insulating substrate GaAs is now preferably used as the starting material for avalanche (IMPATT) diodes, transferred electron (Gunn) diodes and field effect transistors. The GaAs IMPATT diode is presently the hottest performer… Show more
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