Active-matrix micro-light-emitting diode displays driven by monolithically integrated dual-gate oxide thin-film transistors

Yang, Junghoon; Park, HyunWoo; Kim, Baul; Cho, Y. H.; Park, Sang‐Hee Ko

doi:10.1039/d2tc01905a

Cited by 6 publications

(3 citation statements)

References 54 publications

(58 reference statements)

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“…The resulting OTFTs exhibit superior performance of milliampere driving current, low leakage current and large ON/OFF current ratio approaching 10 10 with excellent uniformity and reliability. AM micro-LED displays are finally demonstrated, with the highest resolution of 254 PPI and the highest brightness >150k nits, which are the best results so far among all reported TFT-driven AM micro-LED displays 13 , 14 , 16 – 19 , 31 .…”

Section: Introductionmentioning

confidence: 81%

Wafer-scale organic-on-III-V monolithic heterogeneous integration for active-matrix micro-LED displays

Han,

Ogier,

et al. 2023

Nat Commun

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The organic thin-film transistor is advantageous for monolithic three-dimensional integration attributed to low temperature and facile solution processing. However, the electrical properties of solution deposited organic semiconductor channels are very sensitive to the substrate surface and processing conditions. An organic-last integration technology is developed for wafer-scale heterogeneous integration of a multi-layer organic material stack from solution onto the non-even substrate surface of a III-V micro light emitting diode plane. A via process is proposed to make the via interconnection after fabrication of the organic thin-film transistor. Low-defect uniform organic semiconductor and dielectric layers can then be formed on top to achieve high-quality interfaces. The resulting organic thin-film transistors exhibit superior performance for driving micro light emitting diode displays, in terms of milliampere driving current, and large ON/OFF current ratio approaching 1010 with excellent uniformity and reliability. Active-matrix micro light emitting diode displays are demonstrated with highest brightness of 150,000 nits and highest resolution of 254 pixels-per-inch.

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Section: Introductionmentioning

confidence: 81%

Wafer-scale organic-on-III-V monolithic heterogeneous integration for active-matrix micro-LED displays

Han,

Ogier,

et al. 2023

Nat Commun

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“…Monolithic displays with various backplane technologies, such as organic thin-film transistors (TFTs) and amorphous oxide TFTs, have been reported in the literature. 1,2 Herein, we expand on the work performed by Yang et al, 2 which demonstrated the first monolithically integrated LED display with an indium gallium zinc oxide (IGZO) backplane by fabricating a similar device and performing a more comprehensive system-level performance characterization.…”

Section: Introductionmentioning

confidence: 99%

An active‐matrix microLED display based on monolithic integration with IGZO backplane

Durnan,

Kumar,

Alshanbari

et al. 2024

J Soc Info Display

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This paper presents a method of monolithically integrating gallium nitride micrometer‐scale light‐emitting diodes (microLEDs) with an indium gallium zinc oxide (IGZO) thin‐film transistor (TFT) backplane to produce an active‐matrix microdisplay. After discussion of the fabrication process, individual LEDs, TFTs, and the integrated system are characterized. Results demonstrate a 32 × 32 pixel, 78.4 PPI microdisplay with luminance exceeding 1500 nits. The dynamic set and hold behaviors of the active‐matrix pixel circuit are analyzed to verify the applicability of this technology for use in high and low refresh rate displays.

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“…The study of monolithically integrated LED displays is a research area of growing interest. Monolithic displays with various backplane technologies such as organic thin-film transistors (TFTs) and amorphous oxide TFTs have been reported in the literature [1,2]. Herein, we expand on the work performed by Yang et al [2], which demonstrated the first monolithically integrated LED display with indium gallium zinc oxide (IGZO) backplane by fabricating a similar device and performing a more comprehensive system-level performance characterization.…”

Section: Introductionmentioning

confidence: 99%

68‐1: Distinguished Paper: An Active‐Matrix MicroLED Display Based on Monolithic Integration with IGZO Backplane

Durnan,

Kumar,

Alshanbari

et al. 2024

Symp Digest of Tech Papers

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We present a method of monolithically integrating GaN microLEDs with an IGZO TFT backplane to produce an activematrix microdisplay. After discussion of the fabrication process, individual LEDs, TFTs, and the integrated system are characterized. Results demonstrate a 32x32 pixel, 78.4 PPI microdisplay with luminance exceeding 1500 nits. This type of monolithic microdisplay forges the path forward for future high luminance integrated displays to enable augmented and mixed reality applications.

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Active-matrix micro-light-emitting diode displays driven by monolithically integrated dual-gate oxide thin-film transistors

Abstract: We present the first monolithic fabrication of a-IGZO TFTs on a GaN-based micro-LED array at a low temperature to overcome the weak thermal endurance constraint of the organic planarization layer for high resolution and stable low-cost LED displays.

Cited by 6 publications

References 54 publications

Wafer-scale organic-on-III-V monolithic heterogeneous integration for active-matrix micro-LED displays

Wafer-scale organic-on-III-V monolithic heterogeneous integration for active-matrix micro-LED displays

An active‐matrix microLED display based on monolithic integration with IGZO backplane

68‐1: Distinguished Paper: An Active‐Matrix MicroLED Display Based on Monolithic Integration with IGZO Backplane

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